Acceptor activation of Mg-doped GaN by microwave treatment

Shoou Jinn Chang; Yan Kuin Su; Tzong Liang Tsai; Chung Ying Chang; Chih Lih Chiang; Chih Sung Chang; Tzer Peng Chen; Kuo Hsin Huang

doi:10.1063/1.1340864

Acceptor activation of Mg-doped GaN by microwave treatment

Shoou Jinn Chang, Yan Kuin Su, Tzong Liang Tsai, Chung Ying Chang, Chih Lih Chiang, Chih Sung Chang, Tzer Peng Chen, Kuo Hsin Huang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

A microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way to activate the acceptors in Mg-doped p-type GaN layer. The activation of Mg dopant in p-type GaN layer may be explained as the breaking of magnesium-hydrogen bonding due to the microwave energy absorption.

Original language	English
Pages (from-to)	312-313
Number of pages	2
Journal	Applied Physics Letters
Volume	78
Issue number	3
DOIs	https://doi.org/10.1063/1.1340864
Publication status	Published - 2001 Jan 15

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1340864

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abstract = "A microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way to activate the acceptors in Mg-doped p-type GaN layer. The activation of Mg dopant in p-type GaN layer may be explained as the breaking of magnesium-hydrogen bonding due to the microwave energy absorption.",

author = "Chang, {Shoou Jinn} and Su, {Yan Kuin} and Tsai, {Tzong Liang} and Chang, {Chung Ying} and Chiang, {Chih Lih} and Chang, {Chih Sung} and Chen, {Tzer Peng} and Huang, {Kuo Hsin}",

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AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Tsai, Tzong Liang

AU - Chang, Chung Ying

AU - Chiang, Chih Lih

AU - Chang, Chih Sung

AU - Chen, Tzer Peng

AU - Huang, Kuo Hsin

PY - 2001/1/15

Y1 - 2001/1/15

N2 - A microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way to activate the acceptors in Mg-doped p-type GaN layer. The activation of Mg dopant in p-type GaN layer may be explained as the breaking of magnesium-hydrogen bonding due to the microwave energy absorption.

AB - A microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way to activate the acceptors in Mg-doped p-type GaN layer. The activation of Mg dopant in p-type GaN layer may be explained as the breaking of magnesium-hydrogen bonding due to the microwave energy absorption.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Acceptor activation of Mg-doped GaN by microwave treatment

Abstract

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