Acceptor activation of Mg-doped GaN by microwave treatment

Shoou Jinn Chang, Yan Kuin Su, Tzong Liang Tsai, Chung Ying Chang, Chih Lih Chiang, Chih Sung Chang, Tzer Peng Chen, Kuo Hsin Huang

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


A microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way to activate the acceptors in Mg-doped p-type GaN layer. The activation of Mg dopant in p-type GaN layer may be explained as the breaking of magnesium-hydrogen bonding due to the microwave energy absorption.

Original languageEnglish
Pages (from-to)312-313
Number of pages2
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2001 Jan 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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