Abstract
A microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way to activate the acceptors in Mg-doped p-type GaN layer. The activation of Mg dopant in p-type GaN layer may be explained as the breaking of magnesium-hydrogen bonding due to the microwave energy absorption.
Original language | English |
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Pages (from-to) | 312-313 |
Number of pages | 2 |
Journal | Applied Physics Letters |
Volume | 78 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2001 Jan 15 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)