Acceptor states in boron doped SiGe quantum wells

K. Schmalz; M. S. Kagan; I. V. Altukhov; K. A. Korolev; D. V. Orlov; V. P. Sinis; S. G. Tomas; K. L. Wang; I. N. Yassievich

doi:10.4028/www.scientific.net/msf.258-263.91

Acceptor states in boron doped SiGe quantum wells

K. Schmalz, M. S. Kagan, I. V. Altukhov, K. A. Korolev, D. V. Orlov, V. P. Sinis, S. G. Tomas, K. L. Wang, I. N. Yassievich

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

Abstract

The temperature dependences of lateral conductivity and hole mobility in SiGe quantum well structures selectively doped with boron are presented. The boron A⁺ centers are found to exist and determine the low-temperature conductivity. The activation energy of conductivity at higher temperatures is shown to be determined by the energy distance between strain-split boron A⁰ centers. The model of two-stage excitation of free holes including the thermal activation of holes from the ground to split-off state and next tunneling into the valence band is proposed. The binding energy of A⁺ centers and the energy splitting of boron ground states by strain are found.

Original language	English
Pages (from-to)	91-96
Number of pages	6
Journal	Materials Science Forum
Volume	258-263
Issue number	PART 1
DOIs	https://doi.org/10.4028/www.scientific.net/msf.258-263.91
Publication status	Published - 1997

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Cite this

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title = "Acceptor states in boron doped SiGe quantum wells",

abstract = "The temperature dependences of lateral conductivity and hole mobility in SiGe quantum well structures selectively doped with boron are presented. The boron A+ centers are found to exist and determine the low-temperature conductivity. The activation energy of conductivity at higher temperatures is shown to be determined by the energy distance between strain-split boron A0 centers. The model of two-stage excitation of free holes including the thermal activation of holes from the ground to split-off state and next tunneling into the valence band is proposed. The binding energy of A+ centers and the energy splitting of boron ground states by strain are found.",

author = "K. Schmalz and Kagan, {M. S.} and Altukhov, {I. V.} and Korolev, {K. A.} and Orlov, {D. V.} and Sinis, {V. P.} and Tomas, {S. G.} and Wang, {K. L.} and Yassievich, {I. N.}",

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doi = "10.4028/www.scientific.net/msf.258-263.91",

language = "English",

volume = "258-263",

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journal = "Materials Science Forum",

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T1 - Acceptor states in boron doped SiGe quantum wells

AU - Schmalz, K.

AU - Kagan, M. S.

AU - Altukhov, I. V.

AU - Korolev, K. A.

AU - Orlov, D. V.

AU - Sinis, V. P.

AU - Tomas, S. G.

AU - Wang, K. L.

AU - Yassievich, I. N.

PY - 1997

Y1 - 1997

N2 - The temperature dependences of lateral conductivity and hole mobility in SiGe quantum well structures selectively doped with boron are presented. The boron A+ centers are found to exist and determine the low-temperature conductivity. The activation energy of conductivity at higher temperatures is shown to be determined by the energy distance between strain-split boron A0 centers. The model of two-stage excitation of free holes including the thermal activation of holes from the ground to split-off state and next tunneling into the valence band is proposed. The binding energy of A+ centers and the energy splitting of boron ground states by strain are found.

AB - The temperature dependences of lateral conductivity and hole mobility in SiGe quantum well structures selectively doped with boron are presented. The boron A+ centers are found to exist and determine the low-temperature conductivity. The activation energy of conductivity at higher temperatures is shown to be determined by the energy distance between strain-split boron A0 centers. The model of two-stage excitation of free holes including the thermal activation of holes from the ground to split-off state and next tunneling into the valence band is proposed. The binding energy of A+ centers and the energy splitting of boron ground states by strain are found.

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JO - Materials Science Forum

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Acceptor states in boron doped SiGe quantum wells

Abstract

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