Achievement of 110-nm-Wide Spectral Width in Monolithic Tunnel-Junction Light-Emitting Diode

Man Fang Huang, Ya Hsuan Shih, Jih Yuan Chang, Yen Lung Huang, Jinn Kong Sheu, Yen Kuang Kuo

Research output: Contribution to journalArticlepeer-review

Abstract

Characterization and structural design on monolithic stacked InGaN light-emitting diode (LED) are investigated numerically in an attempt to pursue multicolor light emission and wide spectral width. Crucial physical properties such as the energy band configurations, carrier distributions, and interband transitions are analyzed in detail, which are also utilized as an aid to justify the desired characteristics of the LED structures under study. The compositions of multi-quantum wells, as well as the thicknesses of quantum barriers in each unit stacked LED are appropriately adjusted to simplify the tandem LED structure and optimize the overall emission spectra. Upon optimization, a monolithic tunnel-junction LED with an emission spectral width of approximately 110 nm, full width at half maximum, is demonstrated with only three unit stacked LEDs and two tunnel junctions.

Original languageEnglish
Article number9429246
JournalIEEE Journal of Quantum Electronics
Volume57
Issue number4
DOIs
Publication statusPublished - 2021 Aug

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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