TY - JOUR
T1 - Activation energy of n-GaN epitaxial layers grown on vicinal-cut sapphire substrates
AU - Lin, J. C.
AU - Su, Y. K.
AU - Chang, S. J.
AU - Chen, W. R.
AU - Chen, R. Y.
AU - Cheng, Y. C.
AU - Lin, W. J.
N1 - Funding Information:
This work was partially supported by National Science Council of ROC by a Contract no. NSC-92-2215-E-218-002.
PY - 2005/12/15
Y1 - 2005/12/15
N2 - Si-doped GaN epitaxial layers were grown on 0° and 1° tilted sapphire substrates by metalorganic chemical vapor deposition (MOVCD). It was found that GaN epitaxial layers on tilted substrates were grown with step-flow mode while those on untilted substrates were grown with spiral growth mode. It was also found that number of compensating acceptor, NCOM, equals 1.5×1017 and 8.7×1016 cm-3 for GaN epitaxial layers grown on 0° and 1° tilted sapphire substrates, respectively. Furthermore, it was found that there existed two values of activation energy of 15.2 and 23 meV for the GaN epitaxial layer grown on untilted sapphire substrate. In contrast, only the activation energy of 15.2 meV was found from the GaN epitaxial layer grown on 1° tilted sapphire substrate.
AB - Si-doped GaN epitaxial layers were grown on 0° and 1° tilted sapphire substrates by metalorganic chemical vapor deposition (MOVCD). It was found that GaN epitaxial layers on tilted substrates were grown with step-flow mode while those on untilted substrates were grown with spiral growth mode. It was also found that number of compensating acceptor, NCOM, equals 1.5×1017 and 8.7×1016 cm-3 for GaN epitaxial layers grown on 0° and 1° tilted sapphire substrates, respectively. Furthermore, it was found that there existed two values of activation energy of 15.2 and 23 meV for the GaN epitaxial layer grown on untilted sapphire substrate. In contrast, only the activation energy of 15.2 meV was found from the GaN epitaxial layer grown on 1° tilted sapphire substrate.
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U2 - 10.1016/j.jcrysgro.2005.09.059
DO - 10.1016/j.jcrysgro.2005.09.059
M3 - Article
AN - SCOPUS:28044438705
SN - 0022-0248
VL - 285
SP - 481
EP - 485
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 4
ER -