Activation of high concentrations of phosphorus in germanium by two-steps microwave annealing

Wen Hsi Lee, Tzu Lang Shih, Chia Wei Lin, Yi Chen Chung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, low-energy microwave annealing(MWA) is used to activate the germanium material which is new promising and might replace silicon in the future. A novel MWA method with two steps applies to germanium for solid phase epitaxial recrystallization(SPER) and dopants activation. The purpose of the first step MWA at 2P(1.2kW) for 75 sec is to quickly repair the destroyed crystal lattices which are caused by ion implantation to achieve the SPER. The second step MWA at 1.5P(0.9kW) for 300 sec is used to activate the phosphorus dopants effectively without diffusion and de-activation. The target dopant activation level concentration will be more than 1020 cm-3, and sheet resistance decreases to 78 ohm/sq.

Original languageEnglish
Title of host publication2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509007264
DOIs
Publication statusPublished - 2016 Sep 27
Event21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States
Duration: 2016 Jun 122016 Jun 13

Publication series

Name2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

Other

Other21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
CountryUnited States
CityHonolulu
Period16-06-1216-06-13

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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