Abstract
This study reports on the fabrication of thin-film transistors (TFTs) with transparent zinc oxide (ZnO) semiconductors serving as the active channel and silicon dioxide (SiO 2 ) serving as the gate insulator. The ZnO films were deposited by radiofrequency magnetron sputtering at room temperature. Moreover, the effects of channel thickness on the structural and pulse current-voltage characteristics of ZnO TFTs using a bottom gate configuration were investigated. As the channel thickness increased, the crystalline quality and the channel conductance were enhanced. The electrical characteristics of TFTs exhibited field-effect mobilities of 8.36 cm 2 /Vs to 16.40 cm 2 /Vs and on-to-off current ratios of 10 8 to 10 7 for ZnO layer thickness of 45 nm and 70 nm, respectively. The threshold voltage was in the range of 10 V to 31 V for ZnO layer thicknesses from 35 nm to 70 nm, respectively. The low deposition and processing temperatures make these TFTs suitable for fabrication on flexible substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 2362-2368 |
| Number of pages | 7 |
| Journal | Journal of Electronic Materials |
| Volume | 41 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2012 Sep 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
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Active layer thickness effects on the on-state current and pulse measurement at room temperature on deposited zinc oxide thin-film transistors. / Basu, Sarbani; Singh, Pramod K.; Ghanshyam, C.; Kapur, Pawan; Wang, Yeong-Her.
In: Journal of Electronic Materials, Vol. 41, No. 9, 01.09.2012, p. 2362-2368.Research output: Contribution to journal › Article
TY - JOUR
T1 - Active layer thickness effects on the on-state current and pulse measurement at room temperature on deposited zinc oxide thin-film transistors
AU - Basu, Sarbani
AU - Singh, Pramod K.
AU - Ghanshyam, C.
AU - Kapur, Pawan
AU - Wang, Yeong-Her
PY - 2012/9/1
Y1 - 2012/9/1
N2 - This study reports on the fabrication of thin-film transistors (TFTs) with transparent zinc oxide (ZnO) semiconductors serving as the active channel and silicon dioxide (SiO 2 ) serving as the gate insulator. The ZnO films were deposited by radiofrequency magnetron sputtering at room temperature. Moreover, the effects of channel thickness on the structural and pulse current-voltage characteristics of ZnO TFTs using a bottom gate configuration were investigated. As the channel thickness increased, the crystalline quality and the channel conductance were enhanced. The electrical characteristics of TFTs exhibited field-effect mobilities of 8.36 cm 2 /Vs to 16.40 cm 2 /Vs and on-to-off current ratios of 10 8 to 10 7 for ZnO layer thickness of 45 nm and 70 nm, respectively. The threshold voltage was in the range of 10 V to 31 V for ZnO layer thicknesses from 35 nm to 70 nm, respectively. The low deposition and processing temperatures make these TFTs suitable for fabrication on flexible substrates.
AB - This study reports on the fabrication of thin-film transistors (TFTs) with transparent zinc oxide (ZnO) semiconductors serving as the active channel and silicon dioxide (SiO 2 ) serving as the gate insulator. The ZnO films were deposited by radiofrequency magnetron sputtering at room temperature. Moreover, the effects of channel thickness on the structural and pulse current-voltage characteristics of ZnO TFTs using a bottom gate configuration were investigated. As the channel thickness increased, the crystalline quality and the channel conductance were enhanced. The electrical characteristics of TFTs exhibited field-effect mobilities of 8.36 cm 2 /Vs to 16.40 cm 2 /Vs and on-to-off current ratios of 10 8 to 10 7 for ZnO layer thickness of 45 nm and 70 nm, respectively. The threshold voltage was in the range of 10 V to 31 V for ZnO layer thicknesses from 35 nm to 70 nm, respectively. The low deposition and processing temperatures make these TFTs suitable for fabrication on flexible substrates.
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U2 - 10.1007/s11664-012-2132-4
DO - 10.1007/s11664-012-2132-4
M3 - Article
VL - 41
SP - 2362
EP - 2368
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 9
ER -