A/D converter using InGaAs/InAlAs resonant-tunneling diodes

Tai-Haur Kuo, Hung C. Lin, Robert C. Potter, Dave Shupe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

A novel A/D (analog/digital) converter based on the multiwell resonant-tunneling diode (RTD) is described. By using RTDs, the A/D circuit complexity can be reduced. The authors simulated the performance of a 4-bit A/D converter digitizing a triangular wave with the digital output changing at a 30-GHz rate. The results show that the approach holds the promise of greatly increased speed and reduced circuit complexity and power in comparison to state-of-the-art flash A/Ds. The results from breadboard circuits and SPICE3 simulations are very encouraging.

Original languageEnglish
Title of host publicationProc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit
Editors Anon
PublisherPubl by IEEE
Pages265-273
Number of pages9
Publication statusPublished - 1989
EventProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
Duration: 1989 Aug 71989 Aug 9

Other

OtherProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
CityIthaca, NY, USA
Period89-08-0789-08-09

Fingerprint

Resonant tunneling diodes
Networks (circuits)
Digital circuits
Analog circuits

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kuo, T-H., Lin, H. C., Potter, R. C., & Shupe, D. (1989). A/D converter using InGaAs/InAlAs resonant-tunneling diodes. In Anon (Ed.), Proc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit (pp. 265-273). Publ by IEEE.
Kuo, Tai-Haur ; Lin, Hung C. ; Potter, Robert C. ; Shupe, Dave. / A/D converter using InGaAs/InAlAs resonant-tunneling diodes. Proc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit. editor / Anon. Publ by IEEE, 1989. pp. 265-273
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abstract = "A novel A/D (analog/digital) converter based on the multiwell resonant-tunneling diode (RTD) is described. By using RTDs, the A/D circuit complexity can be reduced. The authors simulated the performance of a 4-bit A/D converter digitizing a triangular wave with the digital output changing at a 30-GHz rate. The results show that the approach holds the promise of greatly increased speed and reduced circuit complexity and power in comparison to state-of-the-art flash A/Ds. The results from breadboard circuits and SPICE3 simulations are very encouraging.",
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Kuo, T-H, Lin, HC, Potter, RC & Shupe, D 1989, A/D converter using InGaAs/InAlAs resonant-tunneling diodes. in Anon (ed.), Proc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit. Publ by IEEE, pp. 265-273, Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, 89-08-07.

A/D converter using InGaAs/InAlAs resonant-tunneling diodes. / Kuo, Tai-Haur; Lin, Hung C.; Potter, Robert C.; Shupe, Dave.

Proc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit. ed. / Anon. Publ by IEEE, 1989. p. 265-273.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - A novel A/D (analog/digital) converter based on the multiwell resonant-tunneling diode (RTD) is described. By using RTDs, the A/D circuit complexity can be reduced. The authors simulated the performance of a 4-bit A/D converter digitizing a triangular wave with the digital output changing at a 30-GHz rate. The results show that the approach holds the promise of greatly increased speed and reduced circuit complexity and power in comparison to state-of-the-art flash A/Ds. The results from breadboard circuits and SPICE3 simulations are very encouraging.

AB - A novel A/D (analog/digital) converter based on the multiwell resonant-tunneling diode (RTD) is described. By using RTDs, the A/D circuit complexity can be reduced. The authors simulated the performance of a 4-bit A/D converter digitizing a triangular wave with the digital output changing at a 30-GHz rate. The results show that the approach holds the promise of greatly increased speed and reduced circuit complexity and power in comparison to state-of-the-art flash A/Ds. The results from breadboard circuits and SPICE3 simulations are very encouraging.

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Kuo T-H, Lin HC, Potter RC, Shupe D. A/D converter using InGaAs/InAlAs resonant-tunneling diodes. In Anon, editor, Proc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit. Publ by IEEE. 1989. p. 265-273