A/D converter using InGaAs/InAlAs resonant-tunneling diodes

Tai Haur Kuo, Hung C. Lin, Robert C. Potter, Dave Shupe

Research output: Contribution to conferencePaper

8 Citations (Scopus)

Abstract

A novel A/D (analog/digital) converter based on the multiwell resonant-tunneling diode (RTD) is described. By using RTDs, the A/D circuit complexity can be reduced. The authors simulated the performance of a 4-bit A/D converter digitizing a triangular wave with the digital output changing at a 30-GHz rate. The results show that the approach holds the promise of greatly increased speed and reduced circuit complexity and power in comparison to state-of-the-art flash A/Ds. The results from breadboard circuits and SPICE3 simulations are very encouraging.

Original languageEnglish
Pages265-273
Number of pages9
Publication statusPublished - 1989 Dec 1
EventProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
Duration: 1989 Aug 71989 Aug 9

Other

OtherProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
CityIthaca, NY, USA
Period89-08-0789-08-09

Fingerprint

Resonant tunneling diodes
Networks (circuits)
Digital circuits
Analog circuits

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kuo, T. H., Lin, H. C., Potter, R. C., & Shupe, D. (1989). A/D converter using InGaAs/InAlAs resonant-tunneling diodes. 265-273. Paper presented at Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, .
Kuo, Tai Haur ; Lin, Hung C. ; Potter, Robert C. ; Shupe, Dave. / A/D converter using InGaAs/InAlAs resonant-tunneling diodes. Paper presented at Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, .9 p.
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abstract = "A novel A/D (analog/digital) converter based on the multiwell resonant-tunneling diode (RTD) is described. By using RTDs, the A/D circuit complexity can be reduced. The authors simulated the performance of a 4-bit A/D converter digitizing a triangular wave with the digital output changing at a 30-GHz rate. The results show that the approach holds the promise of greatly increased speed and reduced circuit complexity and power in comparison to state-of-the-art flash A/Ds. The results from breadboard circuits and SPICE3 simulations are very encouraging.",
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Kuo, TH, Lin, HC, Potter, RC & Shupe, D 1989, 'A/D converter using InGaAs/InAlAs resonant-tunneling diodes', Paper presented at Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, 89-08-07 - 89-08-09 pp. 265-273.

A/D converter using InGaAs/InAlAs resonant-tunneling diodes. / Kuo, Tai Haur; Lin, Hung C.; Potter, Robert C.; Shupe, Dave.

1989. 265-273 Paper presented at Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, .

Research output: Contribution to conferencePaper

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Kuo TH, Lin HC, Potter RC, Shupe D. A/D converter using InGaAs/InAlAs resonant-tunneling diodes. 1989. Paper presented at Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, .