Adiabaticity Engineered Silicon Polarization Independent 3-dB Coupler for the O-Band

Hung Ching Chung; Chih Hsien Chen; Guan Xun Lu; Yung Jr Hung; Shuo Yen Tseng

doi:10.1109/JPHOT.2023.3271320

Adiabaticity Engineered Silicon Polarization Independent 3-dB Coupler for the O-Band

Hung Ching Chung, Chih Hsien Chen, Guan Xun Lu, Yung Jr Hung, Shuo Yen Tseng

Department of Photonics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We demonstrate a compact and broadband polarization independent 3-dB coupler for the O-band on silicon-on-insulator platform. Using the multi-parameter adiabaticity engineering protocol, unwanted coupling between eigenmodes in mode evolution couplers are redistributed for dual polarization modes and multiple wavelengths, resulting in a large operating bandwidth for both TE and TM polarizations. The fabricated device has a bandwidth of 70 nm with a compact mode evolution region of 27 μm.

Original language	English
Article number	6601206
Journal	IEEE Photonics Journal
Volume	15
Issue number	3
DOIs	https://doi.org/10.1109/JPHOT.2023.3271320
Publication status	Published - 2023 Jun 1

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/JPHOT.2023.3271320

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@article{d0ff452f31e749ff998c1b3500d036db,

title = "Adiabaticity Engineered Silicon Polarization Independent 3-dB Coupler for the O-Band",

abstract = "We demonstrate a compact and broadband polarization independent 3-dB coupler for the O-band on silicon-on-insulator platform. Using the multi-parameter adiabaticity engineering protocol, unwanted coupling between eigenmodes in mode evolution couplers are redistributed for dual polarization modes and multiple wavelengths, resulting in a large operating bandwidth for both TE and TM polarizations. The fabricated device has a bandwidth of 70 nm with a compact mode evolution region of 27 μm.",

author = "Chung, {Hung Ching} and Chen, {Chih Hsien} and Lu, {Guan Xun} and Hung, {Yung Jr} and Tseng, {Shuo Yen}",

note = "Funding Information: This work was supported in part by the Ministry of Science and Technology, Taiwan under Grants 111-2221-E-006-052-MY3 and 109-2221-E-110-068-MY3 and in part by Higher Education SPROUT project, Ministry of Education, Taiwan. Publisher Copyright: {\textcopyright} 2009-2012 IEEE.",

year = "2023",

month = jun,

day = "1",

doi = "10.1109/JPHOT.2023.3271320",

language = "English",

volume = "15",

journal = "IEEE Photonics Journal",

issn = "1943-0655",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Adiabaticity Engineered Silicon Polarization Independent 3-dB Coupler for the O-Band

AU - Chung, Hung Ching

AU - Chen, Chih Hsien

AU - Lu, Guan Xun

AU - Hung, Yung Jr

AU - Tseng, Shuo Yen

N1 - Funding Information: This work was supported in part by the Ministry of Science and Technology, Taiwan under Grants 111-2221-E-006-052-MY3 and 109-2221-E-110-068-MY3 and in part by Higher Education SPROUT project, Ministry of Education, Taiwan. Publisher Copyright: © 2009-2012 IEEE.

PY - 2023/6/1

Y1 - 2023/6/1

N2 - We demonstrate a compact and broadband polarization independent 3-dB coupler for the O-band on silicon-on-insulator platform. Using the multi-parameter adiabaticity engineering protocol, unwanted coupling between eigenmodes in mode evolution couplers are redistributed for dual polarization modes and multiple wavelengths, resulting in a large operating bandwidth for both TE and TM polarizations. The fabricated device has a bandwidth of 70 nm with a compact mode evolution region of 27 μm.

AB - We demonstrate a compact and broadband polarization independent 3-dB coupler for the O-band on silicon-on-insulator platform. Using the multi-parameter adiabaticity engineering protocol, unwanted coupling between eigenmodes in mode evolution couplers are redistributed for dual polarization modes and multiple wavelengths, resulting in a large operating bandwidth for both TE and TM polarizations. The fabricated device has a bandwidth of 70 nm with a compact mode evolution region of 27 μm.

UR - http://www.scopus.com/inward/record.url?scp=85159719442&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85159719442&partnerID=8YFLogxK

U2 - 10.1109/JPHOT.2023.3271320

DO - 10.1109/JPHOT.2023.3271320

M3 - Article

AN - SCOPUS:85159719442

SN - 1943-0655

VL - 15

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

IS - 3

M1 - 6601206

ER -

Adiabaticity Engineered Silicon Polarization Independent 3-dB Coupler for the O-Band

Abstract

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