Admittance spectroscopy in CZTSSe: Metastability behavior and voltage dependent defect study

Mark J. Koeper, Charles J. Hages, Jian V. Li, Dean Levi, Rakesh Agrawal

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Admittance spectroscopy has been performed on a CZTSSe device with a carrier injection pretreatment and under electronically relaxed conditions to demonstrate metastability behavior. We show that the measurements with the carrier injection pretreatment demonstrate two admittance signatures while the relaxed measurement demonstrates only one admittance signature with a different activation energy. Additionally, voltage dependent admittance spectroscopy was performed using the carrier injection pretreatment method at each of the applied voltage bias. The activation energies of the two admittance signatures were calculated and are shown to be independent of the voltage bias.

Original languageEnglish
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages206-209
Number of pages4
ISBN (Electronic)9781509056057
DOIs
Publication statusPublished - 2017
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: 2017 Jun 252017 Jun 30

Publication series

Name2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/TerritoryUnited States
CityWashington
Period17-06-2517-06-30

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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