Advanced selective emitter structures by laser opening technique for industrial mc-Si solar cells

J. J. Ho; Y. T. Cheng; J. J. Liou; C. H. Lin; D. Z. Dimitrov; A. Hsu; S. Y. Tsai; C. K. Wang; W. Lee; K. L. Wang

doi:10.1049/el.2010.2471

Advanced selective emitter structures by laser opening technique for industrial mc-Si solar cells

J. J. Ho, Y. T. Cheng, J. J. Liou, C. H. Lin, D. Z. Dimitrov, A. Hsu, S. Y. Tsai, C. K. Wang, W. Lee, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A laser opening technique is employed as the photolithography process to form selective emitter (SE) structures on multi-crystalline silicon (mc-Si) substrates for the large-area (156×156mm²) solar-cell industry. The best efficiency of 16.35 is obtained with the developed SE structure after a damage removal process with optimisation of heavily and lightly doped dopants, which yields a gain of 0.88 absolute compared with that of a reference cell. Significantly, the SE mc-Si solar cell without the damage removal process can also reach a gain of 0.48 absolute. The developed SE process has simplicity, reliability, is fast, cost-effective, and could be effectively applied to mass production in industrial applications.

Original language	English
Pages (from-to)	1559-1561
Number of pages	3
Journal	Electronics Letters
Volume	46
Issue number	23
DOIs	https://doi.org/10.1049/el.2010.2471
Publication status	Published - 2010 Nov 11

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el.2010.2471

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abstract = "A laser opening technique is employed as the photolithography process to form selective emitter (SE) structures on multi-crystalline silicon (mc-Si) substrates for the large-area (156×156mm2) solar-cell industry. The best efficiency of 16.35 is obtained with the developed SE structure after a damage removal process with optimisation of heavily and lightly doped dopants, which yields a gain of 0.88 absolute compared with that of a reference cell. Significantly, the SE mc-Si solar cell without the damage removal process can also reach a gain of 0.48 absolute. The developed SE process has simplicity, reliability, is fast, cost-effective, and could be effectively applied to mass production in industrial applications.",

author = "Ho, {J. J.} and Cheng, {Y. T.} and Liou, {J. J.} and Lin, {C. H.} and Dimitrov, {D. Z.} and A. Hsu and Tsai, {S. Y.} and Wang, {C. K.} and W. Lee and Wang, {K. L.}",

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T1 - Advanced selective emitter structures by laser opening technique for industrial mc-Si solar cells

AU - Ho, J. J.

AU - Cheng, Y. T.

AU - Liou, J. J.

AU - Lin, C. H.

AU - Dimitrov, D. Z.

AU - Hsu, A.

AU - Tsai, S. Y.

AU - Wang, C. K.

AU - Lee, W.

AU - Wang, K. L.

PY - 2010/11/11

Y1 - 2010/11/11

N2 - A laser opening technique is employed as the photolithography process to form selective emitter (SE) structures on multi-crystalline silicon (mc-Si) substrates for the large-area (156×156mm2) solar-cell industry. The best efficiency of 16.35 is obtained with the developed SE structure after a damage removal process with optimisation of heavily and lightly doped dopants, which yields a gain of 0.88 absolute compared with that of a reference cell. Significantly, the SE mc-Si solar cell without the damage removal process can also reach a gain of 0.48 absolute. The developed SE process has simplicity, reliability, is fast, cost-effective, and could be effectively applied to mass production in industrial applications.

AB - A laser opening technique is employed as the photolithography process to form selective emitter (SE) structures on multi-crystalline silicon (mc-Si) substrates for the large-area (156×156mm2) solar-cell industry. The best efficiency of 16.35 is obtained with the developed SE structure after a damage removal process with optimisation of heavily and lightly doped dopants, which yields a gain of 0.88 absolute compared with that of a reference cell. Significantly, the SE mc-Si solar cell without the damage removal process can also reach a gain of 0.48 absolute. The developed SE process has simplicity, reliability, is fast, cost-effective, and could be effectively applied to mass production in industrial applications.

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Advanced selective emitter structures by laser opening technique for industrial mc-Si solar cells

Abstract

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