Abstract
Multilayer Fe–Si–Cr alloy chip power inductors have the benefits of a smaller, thinner profile, lower DC resistance and higher rated current. During metal multilayer power inductor co-firing, Fe–Si–Cr alloy powders react with the inner electrode, silver, to form a large amount of hexagonal flaky AgCrO 2 . The p-type semiconductor, AgCrO 2 , will cause co-fired Fe–Si–Cr alloy multilayer chip power inductor insulation degradation, hence reducing the power conversion efficiency due to the increase in eddy current loss. The AgCrO 2 forming mechanism is investigated in this study. It was observed that silver reacts with the Fe–Si–Cr thermal grown oxide layer, Cr 2 O 3 , and subsequently leads to the formation of Ag 2 CrO 4 when the temperature is lower than 650 °C. The formed Ag 2 CrO 4 with low melting temperature then volatilizes at higher temperatures through the pore channels to react with the volatilized Cr 2 O 3 to form the AgCrO 2 . AgCrO 2 will cause Fe–Si–Cr alloy multilayer chip inductor resistivity and breakdown voltage degradation.
| Original language | English |
|---|---|
| Journal | Journal of Materials Science: Materials in Electronics |
| DOIs | |
| Publication status | Published - 2019 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
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AgCrO 2 formation mechanism during silver inner electrode and Fe–Si–Cr alloy powder co-firing in metal multilayer chip power inductors . / Wu, Yung Ping; Chiang, Hsin Yun; Hsiang, Hsing-I.
In: Journal of Materials Science: Materials in Electronics, 01.01.2019.Research output: Contribution to journal › Article
TY - JOUR
T1 - AgCrO 2 formation mechanism during silver inner electrode and Fe–Si–Cr alloy powder co-firing in metal multilayer chip power inductors
AU - Wu, Yung Ping
AU - Chiang, Hsin Yun
AU - Hsiang, Hsing-I
PY - 2019/1/1
Y1 - 2019/1/1
N2 - Multilayer Fe–Si–Cr alloy chip power inductors have the benefits of a smaller, thinner profile, lower DC resistance and higher rated current. During metal multilayer power inductor co-firing, Fe–Si–Cr alloy powders react with the inner electrode, silver, to form a large amount of hexagonal flaky AgCrO 2 . The p-type semiconductor, AgCrO 2 , will cause co-fired Fe–Si–Cr alloy multilayer chip power inductor insulation degradation, hence reducing the power conversion efficiency due to the increase in eddy current loss. The AgCrO 2 forming mechanism is investigated in this study. It was observed that silver reacts with the Fe–Si–Cr thermal grown oxide layer, Cr 2 O 3 , and subsequently leads to the formation of Ag 2 CrO 4 when the temperature is lower than 650 °C. The formed Ag 2 CrO 4 with low melting temperature then volatilizes at higher temperatures through the pore channels to react with the volatilized Cr 2 O 3 to form the AgCrO 2 . AgCrO 2 will cause Fe–Si–Cr alloy multilayer chip inductor resistivity and breakdown voltage degradation.
AB - Multilayer Fe–Si–Cr alloy chip power inductors have the benefits of a smaller, thinner profile, lower DC resistance and higher rated current. During metal multilayer power inductor co-firing, Fe–Si–Cr alloy powders react with the inner electrode, silver, to form a large amount of hexagonal flaky AgCrO 2 . The p-type semiconductor, AgCrO 2 , will cause co-fired Fe–Si–Cr alloy multilayer chip power inductor insulation degradation, hence reducing the power conversion efficiency due to the increase in eddy current loss. The AgCrO 2 forming mechanism is investigated in this study. It was observed that silver reacts with the Fe–Si–Cr thermal grown oxide layer, Cr 2 O 3 , and subsequently leads to the formation of Ag 2 CrO 4 when the temperature is lower than 650 °C. The formed Ag 2 CrO 4 with low melting temperature then volatilizes at higher temperatures through the pore channels to react with the volatilized Cr 2 O 3 to form the AgCrO 2 . AgCrO 2 will cause Fe–Si–Cr alloy multilayer chip inductor resistivity and breakdown voltage degradation.
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UR - http://www.scopus.com/inward/citedby.url?scp=85063197965&partnerID=8YFLogxK
U2 - 10.1007/s10854-019-01130-5
DO - 10.1007/s10854-019-01130-5
M3 - Article
AN - SCOPUS:85063197965
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
ER -