Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs

A. Khakifirooz; R. Sreenivasan; B. N. Taber; F. Allibert; P. Hashemi; W. Chern; N. Xu; E. C. Wall; S. Mochizuki; J. Li; Y. Yin; N. Loubet; A. Reznicek; S. M. Mignot; D. Lu; H. He; T. Yamashita; P. Morin; G. Tsutsui; C. Y. Chen; V. S. Basker; T. E. Standaert; K. Cheng; T. Levin; B. Y. Nguyen; T. S.King Liu; D. Guo; H. Bu; K. Rim; B. Doris

doi:10.1109/S3S.2013.6716520

Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs

A. Khakifirooz, R. Sreenivasan, B. N. Taber, F. Allibert, P. Hashemi, W. Chern, N. Xu, E. C. Wall, S. Mochizuki, J. Li, Y. Yin, N. Loubet, A. Reznicek, S. M. Mignot, D. Lu, H. He, T. Yamashita, P. Morin, G. Tsutsui, C. Y. ChenV. S. Basker, T. E. Standaert, K. Cheng, T. Levin, B. Y. Nguyen, T. S.King Liu, D. Guo, H. Bu, K. Rim, B. Doris

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Citations (Scopus)

Original language	English
Title of host publication	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
Publisher	IEEE Computer Society
ISBN (Print)	9781479913602
DOIs	https://doi.org/10.1109/S3S.2013.6716520
Publication status	Published - 2013
Event	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 - Monterey, CA, United States Duration: 2013 Oct 7 → 2013 Oct 10

Publication series

Name	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

Other

Other	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
Country/Territory	United States
City	Monterey, CA
Period	13-10-07 → 13-10-10

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/S3S.2013.6716520

Cite this

Khakifirooz, A., Sreenivasan, R., Taber, B. N., Allibert, F., Hashemi, P., Chern, W., Xu, N., Wall, E. C., Mochizuki, S., Li, J., Yin, Y., Loubet, N., Reznicek, A., Mignot, S. M., Lu, D., He, H., Yamashita, T., Morin, P., Tsutsui, G., ... Doris, B. (2013). Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs. In 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 Article 6716520 (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013). IEEE Computer Society. https://doi.org/10.1109/S3S.2013.6716520

@inproceedings{c9f3153599ec4d9982715f48ce10555b,

title = "Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs",

author = "A. Khakifirooz and R. Sreenivasan and Taber, {B. N.} and F. Allibert and P. Hashemi and W. Chern and N. Xu and Wall, {E. C.} and S. Mochizuki and J. Li and Y. Yin and N. Loubet and A. Reznicek and Mignot, {S. M.} and D. Lu and H. He and T. Yamashita and P. Morin and G. Tsutsui and Chen, {C. Y.} and Basker, {V. S.} and Standaert, {T. E.} and K. Cheng and T. Levin and Nguyen, {B. Y.} and Liu, {T. S.King} and D. Guo and H. Bu and K. Rim and B. Doris",

year = "2013",

doi = "10.1109/S3S.2013.6716520",

language = "English",

isbn = "9781479913602",

series = "2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013",

publisher = "IEEE Computer Society",

booktitle = "2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013",

address = "United States",

note = "2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 ; Conference date: 07-10-2013 Through 10-10-2013",

}

Khakifirooz, A, Sreenivasan, R, Taber, BN, Allibert, F, Hashemi, P, Chern, W, Xu, N, Wall, EC, Mochizuki, S, Li, J, Yin, Y, Loubet, N, Reznicek, A, Mignot, SM, Lu, D, He, H, Yamashita, T, Morin, P, Tsutsui, G, Chen, CY, Basker, VS, Standaert, TE, Cheng, K, Levin, T, Nguyen, BY, Liu, TSK, Guo, D, Bu, H, Rim, K & Doris, B 2013, Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs. in 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013., 6716520, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, IEEE Computer Society, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, Monterey, CA, United States, 13-10-07. https://doi.org/10.1109/S3S.2013.6716520

Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs. / Khakifirooz, A.; Sreenivasan, R.; Taber, B. N. et al.
2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013. IEEE Computer Society, 2013. 6716520 (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs

AU - Khakifirooz, A.

AU - Sreenivasan, R.

AU - Taber, B. N.

AU - Allibert, F.

AU - Hashemi, P.

AU - Chern, W.

AU - Xu, N.

AU - Wall, E. C.

AU - Mochizuki, S.

AU - Li, J.

AU - Yin, Y.

AU - Loubet, N.

AU - Reznicek, A.

AU - Mignot, S. M.

AU - Lu, D.

AU - He, H.

AU - Yamashita, T.

AU - Morin, P.

AU - Tsutsui, G.

AU - Chen, C. Y.

AU - Basker, V. S.

AU - Standaert, T. E.

AU - Cheng, K.

AU - Levin, T.

AU - Nguyen, B. Y.

AU - Liu, T. S.King

AU - Guo, D.

AU - Bu, H.

AU - Rim, K.

AU - Doris, B.

PY - 2013

Y1 - 2013

UR - http://www.scopus.com/inward/record.url?scp=84897696191&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84897696191&partnerID=8YFLogxK

U2 - 10.1109/S3S.2013.6716520

DO - 10.1109/S3S.2013.6716520

M3 - Conference contribution

AN - SCOPUS:84897696191

SN - 9781479913602

T3 - 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

BT - 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

PB - IEEE Computer Society

T2 - 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

Y2 - 7 October 2013 through 10 October 2013

ER -

Khakifirooz A, Sreenivasan R, Taber BN, Allibert F, Hashemi P, Chern W et al. Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs. In 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013. IEEE Computer Society. 2013. 6716520. (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013). doi: 10.1109/S3S.2013.6716520

Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Cite this