TY - GEN
T1 - Aging Impact of Power MOSFETs in Charger with Different Operation Frequency
AU - Duh, Kuan Hsun
AU - Wu, Cheng Wen
AU - Shieh, Ming Der
AU - Chen, Chao Hsun
AU - Fan, Ming Yan
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - The global warming and pollution issues have reached an alarming level that requires immediate actions by all governments in the world to reduce fossil fuel vehicles, and even ban them in the foreseeable future. As a result, electric vehicles (EVs) are gaining ground rapidly. Inside the EVs, especially their power train, semiconductor power devices are considered the key components. Increasing the performance, energy efficiency, and reliability of power MOSFET, therefore, is critical in the EV industry. In this work, we stress the reliability and lifetime of power MOSFET devices and propose an aging model for them. We will show the procedure to construct the efficient aging model for a power MOSFET, supported by circuit-level simulation results. The aging conditions, including high temperature and/or high voltage on the gate oxide, will result in threshold voltage shift, which in turn decreases the MOSFET's switching speed and driving capability. With the proposed aging assessment tool for power MOSFET, the device's performance under different aging conditions can be predicted. The experiment results show that aging will reduces its switching speed and driving power. Experimental results by our tool also show that the circuit efficiency, ripple voltage, switching loss, etc., are negatively affected by aging.
AB - The global warming and pollution issues have reached an alarming level that requires immediate actions by all governments in the world to reduce fossil fuel vehicles, and even ban them in the foreseeable future. As a result, electric vehicles (EVs) are gaining ground rapidly. Inside the EVs, especially their power train, semiconductor power devices are considered the key components. Increasing the performance, energy efficiency, and reliability of power MOSFET, therefore, is critical in the EV industry. In this work, we stress the reliability and lifetime of power MOSFET devices and propose an aging model for them. We will show the procedure to construct the efficient aging model for a power MOSFET, supported by circuit-level simulation results. The aging conditions, including high temperature and/or high voltage on the gate oxide, will result in threshold voltage shift, which in turn decreases the MOSFET's switching speed and driving capability. With the proposed aging assessment tool for power MOSFET, the device's performance under different aging conditions can be predicted. The experiment results show that aging will reduces its switching speed and driving power. Experimental results by our tool also show that the circuit efficiency, ripple voltage, switching loss, etc., are negatively affected by aging.
UR - http://www.scopus.com/inward/record.url?scp=85145881160&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85145881160&partnerID=8YFLogxK
U2 - 10.1109/ATS56056.2022.00022
DO - 10.1109/ATS56056.2022.00022
M3 - Conference contribution
AN - SCOPUS:85145881160
T3 - Proceedings of the Asian Test Symposium
SP - 54
EP - 59
BT - Proceedings - 2022 IEEE 31st Asian Test Symposium, ATS 2022
PB - IEEE Computer Society
T2 - 31st IEEE Asian Test Symposium, ATS 2022
Y2 - 21 November 2022 through 23 November 2022
ER -
