@inproceedings{349d7743b819439f8d11432ff5979516,
title = "Al-doped MgZnO/p-AlGaN heterojunction and their application in ultraviolet photodetectors",
abstract = "In this study, n-type Al-doped MgxZn1-xO (AMZO) films were deposited onto p-Al0.08Ga0.92N by using radiofrequency magnetron sputtering followed by annealing at 800°C in nitrogen ambient for 60 s. The film was highly transparent and had transmittances exceeding 95% in the visible region and a sharp absorption edge visible in the ultraviolet region. A high leakage current was obtained in the current-voltage (I-V) characteristics of the GMZO/AlGaN n-p junction diode. The AMZO/AlGaN photodetector based on the AMZO film exhibited a dark current of 1.56 μA at Vbias =-3V. The peak responsivity of the photodetector was approximately 200 nm and a cutoff wavelength was observed at approximately 250 nm.",
author = "Hsueh, {Kuang Po} and Cheng, {Po Wei} and Lin, {Wen Yen} and Chiu, {Hsien Chin} and Sheu, {Jinn Kong} and Yeh, {Yu Hsiang}",
note = "Publisher Copyright: {\textcopyright} 2015 SPIE.; International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2014 ; Conference date: 14-10-2014 Through 15-10-2014",
year = "2015",
doi = "10.1117/12.2074817",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Aulia Nasution",
booktitle = "International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2014",
address = "United States",
}