Al-Doped ZnO/Silicon-rich Oxide Superlattices with High Room-Temperature Thermoelectric Figure of Merit

Hsuan Ta Wu, Chun Wei Pao, You Chun Su, Chuan-Feng Shih

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This research reports the thermoelectric properties of the Al-doped ZnO (AZO)/silicon-rich oxide (SRO) superlattices. The thermoelectric figure of merit (ZT) as functions of the grain size, thickness of the superlattices, the number of SRO layers, and conductance were studied. The use of the SRO layers markedly improved the thermoelectric ZT. Moreover, the replacement of ZnO by AZO further increased the ZT. The ZT value of the AZO/SRO superlattices was as high as 0.44 when the total thickness was 45 nm and three SRO interlayers were inserted. The improvement of ZT was contributed by the reduction of the grain size, formation of the Si nanocrystals and the increase in the electrical conductance caused by using SRO interlayers and Al doping.

Original languageEnglish
Pages (from-to)33-36
Number of pages4
JournalMaterials Letters
Volume245
DOIs
Publication statusPublished - 2019 Jun 15

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Superlattices
Silicon
silicon oxides
figure of merit
Oxides
superlattices
room temperature
Temperature
interlayers
grain size
Nanocrystals
nanocrystals
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Al-Doped ZnO/Silicon-rich Oxide Superlattices with High Room-Temperature Thermoelectric Figure of Merit",
abstract = "This research reports the thermoelectric properties of the Al-doped ZnO (AZO)/silicon-rich oxide (SRO) superlattices. The thermoelectric figure of merit (ZT) as functions of the grain size, thickness of the superlattices, the number of SRO layers, and conductance were studied. The use of the SRO layers markedly improved the thermoelectric ZT. Moreover, the replacement of ZnO by AZO further increased the ZT. The ZT value of the AZO/SRO superlattices was as high as 0.44 when the total thickness was 45 nm and three SRO interlayers were inserted. The improvement of ZT was contributed by the reduction of the grain size, formation of the Si nanocrystals and the increase in the electrical conductance caused by using SRO interlayers and Al doping.",
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Al-Doped ZnO/Silicon-rich Oxide Superlattices with High Room-Temperature Thermoelectric Figure of Merit. / Wu, Hsuan Ta; Pao, Chun Wei; Su, You Chun; Shih, Chuan-Feng.

In: Materials Letters, Vol. 245, 15.06.2019, p. 33-36.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Al-Doped ZnO/Silicon-rich Oxide Superlattices with High Room-Temperature Thermoelectric Figure of Merit

AU - Wu, Hsuan Ta

AU - Pao, Chun Wei

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AU - Shih, Chuan-Feng

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AB - This research reports the thermoelectric properties of the Al-doped ZnO (AZO)/silicon-rich oxide (SRO) superlattices. The thermoelectric figure of merit (ZT) as functions of the grain size, thickness of the superlattices, the number of SRO layers, and conductance were studied. The use of the SRO layers markedly improved the thermoelectric ZT. Moreover, the replacement of ZnO by AZO further increased the ZT. The ZT value of the AZO/SRO superlattices was as high as 0.44 when the total thickness was 45 nm and three SRO interlayers were inserted. The improvement of ZT was contributed by the reduction of the grain size, formation of the Si nanocrystals and the increase in the electrical conductance caused by using SRO interlayers and Al doping.

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