Al-Doped ZnO/Silicon-rich Oxide Superlattices with High Room-Temperature Thermoelectric Figure of Merit

Hsuan Ta Wu; Chun Wei Pao; You Chun Su; Chuan Feng Shih

doi:10.1016/j.matlet.2019.02.063

Al-Doped ZnO/Silicon-rich Oxide Superlattices with High Room-Temperature Thermoelectric Figure of Merit

Hsuan Ta Wu, Chun Wei Pao, You Chun Su, Chuan Feng Shih

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

This research reports the thermoelectric properties of the Al-doped ZnO (AZO)/silicon-rich oxide (SRO) superlattices. The thermoelectric figure of merit (ZT) as functions of the grain size, thickness of the superlattices, the number of SRO layers, and conductance were studied. The use of the SRO layers markedly improved the thermoelectric ZT. Moreover, the replacement of ZnO by AZO further increased the ZT. The ZT value of the AZO/SRO superlattices was as high as 0.44 when the total thickness was 45 nm and three SRO interlayers were inserted. The improvement of ZT was contributed by the reduction of the grain size, formation of the Si nanocrystals and the increase in the electrical conductance caused by using SRO interlayers and Al doping.

Original language	English
Pages (from-to)	33-36
Number of pages	4
Journal	Materials Letters
Volume	245
DOIs	https://doi.org/10.1016/j.matlet.2019.02.063
Publication status	Published - 2019 Jun 15

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{be2f91cf34f1486b951ee61824126752,

title = "Al-Doped ZnO/Silicon-rich Oxide Superlattices with High Room-Temperature Thermoelectric Figure of Merit",

abstract = "This research reports the thermoelectric properties of the Al-doped ZnO (AZO)/silicon-rich oxide (SRO) superlattices. The thermoelectric figure of merit (ZT) as functions of the grain size, thickness of the superlattices, the number of SRO layers, and conductance were studied. The use of the SRO layers markedly improved the thermoelectric ZT. Moreover, the replacement of ZnO by AZO further increased the ZT. The ZT value of the AZO/SRO superlattices was as high as 0.44 when the total thickness was 45 nm and three SRO interlayers were inserted. The improvement of ZT was contributed by the reduction of the grain size, formation of the Si nanocrystals and the increase in the electrical conductance caused by using SRO interlayers and Al doping.",

author = "Wu, {Hsuan Ta} and Pao, {Chun Wei} and Su, {You Chun} and Shih, {Chuan Feng}",

note = "Funding Information: The authors are grateful for the support of the Ministry of Science and Technology of the Republic of China under Contract No. 106-2221-E-006-225-, MOST 107-2221-E-006-160 -, Taiwan. Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = jun,

day = "15",

doi = "10.1016/j.matlet.2019.02.063",

language = "English",

volume = "245",

pages = "33--36",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

}

TY - JOUR

T1 - Al-Doped ZnO/Silicon-rich Oxide Superlattices with High Room-Temperature Thermoelectric Figure of Merit

AU - Wu, Hsuan Ta

AU - Pao, Chun Wei

AU - Su, You Chun

AU - Shih, Chuan Feng

N1 - Funding Information: The authors are grateful for the support of the Ministry of Science and Technology of the Republic of China under Contract No. 106-2221-E-006-225-, MOST 107-2221-E-006-160 -, Taiwan. Publisher Copyright: © 2019 Elsevier B.V.

PY - 2019/6/15

Y1 - 2019/6/15

N2 - This research reports the thermoelectric properties of the Al-doped ZnO (AZO)/silicon-rich oxide (SRO) superlattices. The thermoelectric figure of merit (ZT) as functions of the grain size, thickness of the superlattices, the number of SRO layers, and conductance were studied. The use of the SRO layers markedly improved the thermoelectric ZT. Moreover, the replacement of ZnO by AZO further increased the ZT. The ZT value of the AZO/SRO superlattices was as high as 0.44 when the total thickness was 45 nm and three SRO interlayers were inserted. The improvement of ZT was contributed by the reduction of the grain size, formation of the Si nanocrystals and the increase in the electrical conductance caused by using SRO interlayers and Al doping.

AB - This research reports the thermoelectric properties of the Al-doped ZnO (AZO)/silicon-rich oxide (SRO) superlattices. The thermoelectric figure of merit (ZT) as functions of the grain size, thickness of the superlattices, the number of SRO layers, and conductance were studied. The use of the SRO layers markedly improved the thermoelectric ZT. Moreover, the replacement of ZnO by AZO further increased the ZT. The ZT value of the AZO/SRO superlattices was as high as 0.44 when the total thickness was 45 nm and three SRO interlayers were inserted. The improvement of ZT was contributed by the reduction of the grain size, formation of the Si nanocrystals and the increase in the electrical conductance caused by using SRO interlayers and Al doping.

UR - http://www.scopus.com/inward/record.url?scp=85062025189&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85062025189&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2019.02.063

DO - 10.1016/j.matlet.2019.02.063

M3 - Article

AN - SCOPUS:85062025189

SN - 0167-577X

VL - 245

SP - 33

EP - 36

JO - Materials Letters

JF - Materials Letters

ER -

Al-Doped ZnO/Silicon-rich Oxide Superlattices with High Room-Temperature Thermoelectric Figure of Merit

Abstract

All Science Journal Classification (ASJC) codes

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