Al-doping effect on structural, transport and optical properties of ZnO films by simultaneous RF and DC magnetron sputtering

J. J. Lu, S. Y. Tsai, Y. M. Lu, T. C. Lin, K. J. Gan

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

Transparent and conductive Al-doped ZnO films have been prepared by simultaneous RF and DC magnetron sputtering. In order to study the properties of the Al-doped ZnO films, we performed X-ray diffraction, X-ray absorption spectroscopy, temperature dependence of electrical resistance and Hall measurements, as well as optical transmission spectroscopy. The results revealed that all the samples were polycrystalline with a strong preferential c-axis orientation. A minimum resistivity of 7.13 × 1 0- 3 Ω cm was obtained, and a metallic-type conducting behavior was observed for the film at 50 W. Our present work suggests that the electrical transport property of the Al-doped ZnO films is closely related to the crystallinity. A large number of defects due to poor crystallinity and the induced stress field are able to immobilize the free carrier thereby reducing the conductivity.

Original languageEnglish
Pages (from-to)2177-2180
Number of pages4
JournalSolid State Communications
Volume149
Issue number47-48
DOIs
Publication statusPublished - 2009 Dec 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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