AlxGa1-xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier

W. S. Chen; S. J. Chang; Y. K. Su; R. L. Wang; C. H. Kuo; S. C. Shei

doi:10.1016/j.jcrysgro.2004.12.007

Al_xGa_1-xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier

W. S. Chen, S. J. Chang, Y. K. Su, R. L. Wang, C. H. Kuo, S. C. Shei

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Al_xGa_1-xN/GaN heterostructure field-effect transistors (HFETs) with different Al mole fractions were grown on sapphire substrates. With a 5-nm-thick undoped Al_xGa_1-xN spacer layer and a 14-nm-thick Si-doped Al_xGa_1- _xN layer, it was found that we achieved the largest product value of sheet carrier concentration and electron mobility from the sample with an Al mole fraction of 0.32. Due to the insertion of an Mg-doped GaN layer, it was found that all samples exhibit good pinch-off characteristics. With a 1-μm-gate length, the measured saturation I_DS were 207, 270, 430, and 355 mA/mm while the maximum g_m were 84, 129, 165, and 137 mS/mm for samples with an Al composition of 0.22, 0.26, 0.32 and 0.36, respectively.

Original language	English
Pages (from-to)	398-403
Number of pages	6
Journal	Journal of Crystal Growth
Volume	275
Issue number	3-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.12.007
Publication status	Published - 2005 Mar 1

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2004.12.007

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@article{323a1db86feb4650b63258b2f89df0f1,

title = "AlxGa1-xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier",

abstract = "AlxGa1-xN/GaN heterostructure field-effect transistors (HFETs) with different Al mole fractions were grown on sapphire substrates. With a 5-nm-thick undoped AlxGa1-xN spacer layer and a 14-nm-thick Si-doped AlxGa1- xN layer, it was found that we achieved the largest product value of sheet carrier concentration and electron mobility from the sample with an Al mole fraction of 0.32. Due to the insertion of an Mg-doped GaN layer, it was found that all samples exhibit good pinch-off characteristics. With a 1-μm-gate length, the measured saturation IDS were 207, 270, 430, and 355 mA/mm while the maximum gm were 84, 129, 165, and 137 mS/mm for samples with an Al composition of 0.22, 0.26, 0.32 and 0.36, respectively.",

author = "Chen, {W. S.} and Chang, {S. J.} and Su, {Y. K.} and Wang, {R. L.} and Kuo, {C. H.} and Shei, {S. C.}",

note = "Funding Information: This work was supported by National Science Council under contract no. NSC-89-2215-E-006-095.",

year = "2005",

month = mar,

day = "1",

doi = "10.1016/j.jcrysgro.2004.12.007",

language = "English",

volume = "275",

pages = "398--403",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "3-4",

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TY - JOUR

T1 - AlxGa1-xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier

AU - Chen, W. S.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Wang, R. L.

AU - Kuo, C. H.

AU - Shei, S. C.

N1 - Funding Information: This work was supported by National Science Council under contract no. NSC-89-2215-E-006-095.

PY - 2005/3/1

Y1 - 2005/3/1

N2 - AlxGa1-xN/GaN heterostructure field-effect transistors (HFETs) with different Al mole fractions were grown on sapphire substrates. With a 5-nm-thick undoped AlxGa1-xN spacer layer and a 14-nm-thick Si-doped AlxGa1- xN layer, it was found that we achieved the largest product value of sheet carrier concentration and electron mobility from the sample with an Al mole fraction of 0.32. Due to the insertion of an Mg-doped GaN layer, it was found that all samples exhibit good pinch-off characteristics. With a 1-μm-gate length, the measured saturation IDS were 207, 270, 430, and 355 mA/mm while the maximum gm were 84, 129, 165, and 137 mS/mm for samples with an Al composition of 0.22, 0.26, 0.32 and 0.36, respectively.

AB - AlxGa1-xN/GaN heterostructure field-effect transistors (HFETs) with different Al mole fractions were grown on sapphire substrates. With a 5-nm-thick undoped AlxGa1-xN spacer layer and a 14-nm-thick Si-doped AlxGa1- xN layer, it was found that we achieved the largest product value of sheet carrier concentration and electron mobility from the sample with an Al mole fraction of 0.32. Due to the insertion of an Mg-doped GaN layer, it was found that all samples exhibit good pinch-off characteristics. With a 1-μm-gate length, the measured saturation IDS were 207, 270, 430, and 355 mA/mm while the maximum gm were 84, 129, 165, and 137 mS/mm for samples with an Al composition of 0.22, 0.26, 0.32 and 0.36, respectively.

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U2 - 10.1016/j.jcrysgro.2004.12.007

DO - 10.1016/j.jcrysgro.2004.12.007

M3 - Article

AN - SCOPUS:14844364279

VL - 275

SP - 398

EP - 403

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3-4

ER -

Al_xGa_1-xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier

Abstract

All Science Journal Classification (ASJC) codes

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