AlGaN/GaN Schottky barrier photodetectors (PDs) with and without a low temperature (LT) AlGaN intermediate layer (IML) were both fabricated and characterized. It was found that we can reduce dark leakage current by around 4 orders of magnitude and enhance UV-to-visible rejection ratio by around 2 orders of magnitude by using an LT AlGaN IML. With -5 V applied bias, we can achieve lower noise equivalent power and higher normalized detectivity (D) of the PD, which were 5.19× 10-10 W and 2.8× 109 cm Hz0.5 W-1, respectively, with an LT AlGaN IML.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry