Al0.25 Ga0.75 N/GaN schottky barrier photodetectors with an Al0.3 Ga0.7 N intermediate layer

K. H. Lee; P. C. Chang; S. J. Chang; Y. K. Su; Y. C. Wang; C. L. Yu; S. L. Wu

doi:10.1149/1.3129445

Al0.25 Ga0.75 N/GaN schottky barrier photodetectors with an Al0.3 Ga0.7 N intermediate layer

K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su, Y. C. Wang, C. L. Yu, S. L. Wu

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

AlGaN/GaN Schottky barrier photodetectors (PDs) with and without a low temperature (LT) AlGaN intermediate layer (IML) were both fabricated and characterized. It was found that we can reduce dark leakage current by around 4 orders of magnitude and enhance UV-to-visible rejection ratio by around 2 orders of magnitude by using an LT AlGaN IML. With -5 V applied bias, we can achieve lower noise equivalent power and higher normalized detectivity (D) of the PD, which were 5.19× 10-10 W and 2.8× 109 cm Hz0.5 W-1, respectively, with an LT AlGaN IML.

Original language	English
Pages (from-to)	J199-J202
Journal	Journal of the Electrochemical Society
Volume	156
Issue number	7
DOIs	https://doi.org/10.1149/1.3129445
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Al0.25 Ga0.75 N/GaN schottky barrier photodetectors with an Al0.3 Ga0.7 N intermediate layer",

abstract = "AlGaN/GaN Schottky barrier photodetectors (PDs) with and without a low temperature (LT) AlGaN intermediate layer (IML) were both fabricated and characterized. It was found that we can reduce dark leakage current by around 4 orders of magnitude and enhance UV-to-visible rejection ratio by around 2 orders of magnitude by using an LT AlGaN IML. With -5 V applied bias, we can achieve lower noise equivalent power and higher normalized detectivity (D) of the PD, which were 5.19× 10-10 W and 2.8× 109 cm Hz0.5 W-1, respectively, with an LT AlGaN IML.",

author = "Lee, {K. H.} and Chang, {P. C.} and Chang, {S. J.} and Su, {Y. K.} and Wang, {Y. C.} and Yu, {C. L.} and Wu, {S. L.}",

year = "2009",

doi = "10.1149/1.3129445",

language = "English",

volume = "156",

pages = "J199--J202",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

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TY - JOUR

T1 - Al0.25 Ga0.75 N/GaN schottky barrier photodetectors with an Al0.3 Ga0.7 N intermediate layer

AU - Lee, K. H.

AU - Chang, P. C.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Wang, Y. C.

AU - Yu, C. L.

AU - Wu, S. L.

PY - 2009

Y1 - 2009

N2 - AlGaN/GaN Schottky barrier photodetectors (PDs) with and without a low temperature (LT) AlGaN intermediate layer (IML) were both fabricated and characterized. It was found that we can reduce dark leakage current by around 4 orders of magnitude and enhance UV-to-visible rejection ratio by around 2 orders of magnitude by using an LT AlGaN IML. With -5 V applied bias, we can achieve lower noise equivalent power and higher normalized detectivity (D) of the PD, which were 5.19× 10-10 W and 2.8× 109 cm Hz0.5 W-1, respectively, with an LT AlGaN IML.

AB - AlGaN/GaN Schottky barrier photodetectors (PDs) with and without a low temperature (LT) AlGaN intermediate layer (IML) were both fabricated and characterized. It was found that we can reduce dark leakage current by around 4 orders of magnitude and enhance UV-to-visible rejection ratio by around 2 orders of magnitude by using an LT AlGaN IML. With -5 V applied bias, we can achieve lower noise equivalent power and higher normalized detectivity (D) of the PD, which were 5.19× 10-10 W and 2.8× 109 cm Hz0.5 W-1, respectively, with an LT AlGaN IML.

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DO - 10.1149/1.3129445

M3 - Article

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VL - 156

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 7

ER -

Al0.25 Ga0.75 N/GaN schottky barrier photodetectors with an Al0.3 Ga0.7 N intermediate layer

Abstract

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