Abstract
AlGaN/GaN Schottky barrier photodetectors (PDs) with and without a low temperature (LT) AlGaN intermediate layer (IML) were both fabricated and characterized. It was found that we can reduce dark leakage current by around 4 orders of magnitude and enhance UV-to-visible rejection ratio by around 2 orders of magnitude by using an LT AlGaN IML. With -5 V applied bias, we can achieve lower noise equivalent power and higher normalized detectivity (D) of the PD, which were 5.19× 10-10 W and 2.8× 109 cm Hz0.5 W-1, respectively, with an LT AlGaN IML.
| Original language | English |
|---|---|
| Journal | Journal of the Electrochemical Society |
| Volume | 156 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2009 Jun 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
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Lee, K. H., Chang, P. C., Chang, S-J., Su, Y. K., Wang, Y. C., Yu, C. L., & Wu, S. L. (2009). Al0.25 Ga0.75 N/GaN schottky barrier photodetectors with an Al0.3 Ga0.7 N intermediate layer. Journal of the Electrochemical Society, 156(7). https://doi.org/10.1149/1.3129445