Al0.25 Ga0.75 N/GaN schottky barrier photodetectors with an Al0.3 Ga0.7 N intermediate layer

K. H. Lee, P. C. Chang, Shoou-Jinn Chang, Y. K. Su, Y. C. Wang, C. L. Yu, S. L. Wu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

AlGaN/GaN Schottky barrier photodetectors (PDs) with and without a low temperature (LT) AlGaN intermediate layer (IML) were both fabricated and characterized. It was found that we can reduce dark leakage current by around 4 orders of magnitude and enhance UV-to-visible rejection ratio by around 2 orders of magnitude by using an LT AlGaN IML. With -5 V applied bias, we can achieve lower noise equivalent power and higher normalized detectivity (D) of the PD, which were 5.19× 10-10 W and 2.8× 109 cm Hz0.5 W-1, respectively, with an LT AlGaN IML.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume156
Issue number7
DOIs
Publication statusPublished - 2009 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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