Abstract
AlGaN/GaN Schottky barrier photodetectors (PDs) with and without a low temperature (LT) AlGaN intermediate layer (IML) were both fabricated and characterized. It was found that we can reduce dark leakage current by around 4 orders of magnitude and enhance UV-to-visible rejection ratio by around 2 orders of magnitude by using an LT AlGaN IML. With -5 V applied bias, we can achieve lower noise equivalent power and higher normalized detectivity (D) of the PD, which were 5.19× 10-10 W and 2.8× 109 cm Hz0.5 W-1, respectively, with an LT AlGaN IML.
| Original language | English |
|---|---|
| Pages (from-to) | J199-J202 |
| Journal | Journal of the Electrochemical Society |
| Volume | 156 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2009 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
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