Al₂O₃-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al₂O₃/TiO₂ Passivation Oxides

Engineering & Materials Science

• Passivation 84%
• Oxide semiconductors 83%
• High electron mobility transistors 81%
• Oxides 60%
• Electric breakdown 52%
• Metals 44%
• Composite materials 40%
• Spray pyrolysis 36%
• Sputtering 29%
• Transconductance 27%
• Current density 22%
• Ions 21%
• Ultrasonics 19%
• Networks (circuits) 12%

Chemical Compounds

• Chemical Passivation 70%
• Breakdown Voltage 69%
• Field Effect 69%
• Oxide 37%
• Transconductance 35%
• Composite Material 34%
• Spray Pyrolysis 27%
• Sputtering 25%
• Dielectric Material 20%
• Current Density 17%
• Ion 9%

Medicine & Life Sciences

• Oxides 84%
• Metals 60%
• Pyrolysis 21%
• Ultrasonics 14%
• Ions 11%
• Equipment and Supplies 8%