AlGaAs/GaAs Double-Heterostructure-Emitter Bipolar Transistor (DHEBT)

Wen Chau Liu; Der Feng Guo; Wen Shiung Lour

doi:10.1109/16.168743

AlGaAs/GaAs Double-Heterostructure-Emitter Bipolar Transistor (DHEBT)

Wen Chau Liu, Der Feng Guo, Wen Shiung Lour

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

This paper presents an AlGaAs/GaAs double-het-erostructure-emitter bipolar transistor (DHEBT) fabricated by molecular beam epitaxy (MBE). The symmetrical structure, with respect to the base layer, results in bidirectional transistor and switching behavior. Due to a significant area difference between emitter-base (E-B) and base-collector (BC) junction, an asymmetrical property is observed. With an emitter edge-thinning design, the transistor performance may be further improved. A common-emitter current gain of up to 140 with a negligible collector-emitter offset voltage (∼40 mV) is achieved. A bidirectional S-shaped negative-differential-resistance (NDR) phenomenon, due to the avalanche multiplication and the regenerative loop of potential barrier lowering effect, occurs at high VCE bias voltage. The temperature dependence of the NDR is also investigated. In addition, a three-terminal-controlled switching device can perform well when the control current is introduced into the base electrode. Consequently, the amplifying and the switching features of the studied structure show a good potential for device and circuit applications.

Original language	English
Pages (from-to)	2740-2744
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	39
Issue number	12
DOIs	https://doi.org/10.1109/16.168743
Publication status	Published - 1992 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "AlGaAs/GaAs Double-Heterostructure-Emitter Bipolar Transistor (DHEBT)",

abstract = "This paper presents an AlGaAs/GaAs double-het-erostructure-emitter bipolar transistor (DHEBT) fabricated by molecular beam epitaxy (MBE). The symmetrical structure, with respect to the base layer, results in bidirectional transistor and switching behavior. Due to a significant area difference between emitter-base (E-B) and base-collector (BC) junction, an asymmetrical property is observed. With an emitter edge-thinning design, the transistor performance may be further improved. A common-emitter current gain of up to 140 with a negligible collector-emitter offset voltage (∼40 mV) is achieved. A bidirectional S-shaped negative-differential-resistance (NDR) phenomenon, due to the avalanche multiplication and the regenerative loop of potential barrier lowering effect, occurs at high VCE bias voltage. The temperature dependence of the NDR is also investigated. In addition, a three-terminal-controlled switching device can perform well when the control current is introduced into the base electrode. Consequently, the amplifying and the switching features of the studied structure show a good potential for device and circuit applications.",

author = "Liu, {Wen Chau} and Guo, {Der Feng} and Lour, {Wen Shiung}",

note = "Funding Information: Manuscript received April 27, 1992; revised July 13, 1992. This work was supported by the National Science Council of the Republic of China under Contract NSC 81-0404-E-006-105. The review of this paper was arranged by Associate Editor J. J. Coleman W. C. Liu and D. F. Guo are with the Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, ROC.",

year = "1992",

month = dec,

doi = "10.1109/16.168743",

language = "English",

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pages = "2740--2744",

journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - AlGaAs/GaAs Double-Heterostructure-Emitter Bipolar Transistor (DHEBT)

AU - Liu, Wen Chau

AU - Guo, Der Feng

AU - Lour, Wen Shiung

N1 - Funding Information: Manuscript received April 27, 1992; revised July 13, 1992. This work was supported by the National Science Council of the Republic of China under Contract NSC 81-0404-E-006-105. The review of this paper was arranged by Associate Editor J. J. Coleman W. C. Liu and D. F. Guo are with the Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, ROC.

PY - 1992/12

Y1 - 1992/12

N2 - This paper presents an AlGaAs/GaAs double-het-erostructure-emitter bipolar transistor (DHEBT) fabricated by molecular beam epitaxy (MBE). The symmetrical structure, with respect to the base layer, results in bidirectional transistor and switching behavior. Due to a significant area difference between emitter-base (E-B) and base-collector (BC) junction, an asymmetrical property is observed. With an emitter edge-thinning design, the transistor performance may be further improved. A common-emitter current gain of up to 140 with a negligible collector-emitter offset voltage (∼40 mV) is achieved. A bidirectional S-shaped negative-differential-resistance (NDR) phenomenon, due to the avalanche multiplication and the regenerative loop of potential barrier lowering effect, occurs at high VCE bias voltage. The temperature dependence of the NDR is also investigated. In addition, a three-terminal-controlled switching device can perform well when the control current is introduced into the base electrode. Consequently, the amplifying and the switching features of the studied structure show a good potential for device and circuit applications.

AB - This paper presents an AlGaAs/GaAs double-het-erostructure-emitter bipolar transistor (DHEBT) fabricated by molecular beam epitaxy (MBE). The symmetrical structure, with respect to the base layer, results in bidirectional transistor and switching behavior. Due to a significant area difference between emitter-base (E-B) and base-collector (BC) junction, an asymmetrical property is observed. With an emitter edge-thinning design, the transistor performance may be further improved. A common-emitter current gain of up to 140 with a negligible collector-emitter offset voltage (∼40 mV) is achieved. A bidirectional S-shaped negative-differential-resistance (NDR) phenomenon, due to the avalanche multiplication and the regenerative loop of potential barrier lowering effect, occurs at high VCE bias voltage. The temperature dependence of the NDR is also investigated. In addition, a three-terminal-controlled switching device can perform well when the control current is introduced into the base electrode. Consequently, the amplifying and the switching features of the studied structure show a good potential for device and circuit applications.

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AlGaAs/GaAs Double-Heterostructure-Emitter Bipolar Transistor (DHEBT)

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