AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) prepared by molecular beam epitaxy

Wen-Chau Liu, Wen Shiung Lour

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A novel AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) has been fabricated and demonstrated. The problems of conventional single heterojunction bipolar transistors (SHBTs) such as graded AlxGa1-xAx emitter and the precise alignment of emitter-base junction are avoided. The proposed HEBT device exhibits significant advantages as (i) ease of fabrication, (ii) extremely small collector offset voltage. The common-emmiter current gain up to 180 with an offset voltage about 80 mV has been obtained in the nonoptimized device. Furthermore, an interesting controllable S-shaped negative-differential-resistance (NDR) phenomenon is observed under reverse operation mode. Therefore, the proposed HEBT may be employed as a multiple-function device which provides the transistor and switch actions on the same wafer, simultaneously.

Original languageEnglish
Pages (from-to)717-722
Number of pages6
JournalSolid State Electronics
Volume34
Issue number7
DOIs
Publication statusPublished - 1991 Jan 1

Fingerprint

Bipolar transistors
bipolar transistors
Molecular beam epitaxy
aluminum gallium arsenides
Heterojunctions
emitters
molecular beam epitaxy
Heterojunction bipolar transistors
Electric potential
Transistors
Switches
Fabrication
electric potential
accumulators
heterojunctions
transistors
switches
alignment
gallium arsenide
wafers

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{056523bc5b124c978aaa483d56c65426,
title = "AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) prepared by molecular beam epitaxy",
abstract = "A novel AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) has been fabricated and demonstrated. The problems of conventional single heterojunction bipolar transistors (SHBTs) such as graded AlxGa1-xAx emitter and the precise alignment of emitter-base junction are avoided. The proposed HEBT device exhibits significant advantages as (i) ease of fabrication, (ii) extremely small collector offset voltage. The common-emmiter current gain up to 180 with an offset voltage about 80 mV has been obtained in the nonoptimized device. Furthermore, an interesting controllable S-shaped negative-differential-resistance (NDR) phenomenon is observed under reverse operation mode. Therefore, the proposed HEBT may be employed as a multiple-function device which provides the transistor and switch actions on the same wafer, simultaneously.",
author = "Wen-Chau Liu and Lour, {Wen Shiung}",
year = "1991",
month = "1",
day = "1",
doi = "10.1016/0038-1101(91)90007-L",
language = "English",
volume = "34",
pages = "717--722",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "7",

}

AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) prepared by molecular beam epitaxy. / Liu, Wen-Chau; Lour, Wen Shiung.

In: Solid State Electronics, Vol. 34, No. 7, 01.01.1991, p. 717-722.

Research output: Contribution to journalArticle

TY - JOUR

T1 - AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) prepared by molecular beam epitaxy

AU - Liu, Wen-Chau

AU - Lour, Wen Shiung

PY - 1991/1/1

Y1 - 1991/1/1

N2 - A novel AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) has been fabricated and demonstrated. The problems of conventional single heterojunction bipolar transistors (SHBTs) such as graded AlxGa1-xAx emitter and the precise alignment of emitter-base junction are avoided. The proposed HEBT device exhibits significant advantages as (i) ease of fabrication, (ii) extremely small collector offset voltage. The common-emmiter current gain up to 180 with an offset voltage about 80 mV has been obtained in the nonoptimized device. Furthermore, an interesting controllable S-shaped negative-differential-resistance (NDR) phenomenon is observed under reverse operation mode. Therefore, the proposed HEBT may be employed as a multiple-function device which provides the transistor and switch actions on the same wafer, simultaneously.

AB - A novel AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) has been fabricated and demonstrated. The problems of conventional single heterojunction bipolar transistors (SHBTs) such as graded AlxGa1-xAx emitter and the precise alignment of emitter-base junction are avoided. The proposed HEBT device exhibits significant advantages as (i) ease of fabrication, (ii) extremely small collector offset voltage. The common-emmiter current gain up to 180 with an offset voltage about 80 mV has been obtained in the nonoptimized device. Furthermore, an interesting controllable S-shaped negative-differential-resistance (NDR) phenomenon is observed under reverse operation mode. Therefore, the proposed HEBT may be employed as a multiple-function device which provides the transistor and switch actions on the same wafer, simultaneously.

UR - http://www.scopus.com/inward/record.url?scp=0026186336&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026186336&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(91)90007-L

DO - 10.1016/0038-1101(91)90007-L

M3 - Article

VL - 34

SP - 717

EP - 722

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 7

ER -