AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) prepared by molecular beam epitaxy

Wen Chau Liu; Wen Shiung Lour

doi:10.1016/0038-1101(91)90007-L

AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) prepared by molecular beam epitaxy

Wen Chau Liu, Wen Shiung Lour

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

A novel AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) has been fabricated and demonstrated. The problems of conventional single heterojunction bipolar transistors (SHBTs) such as graded Al_xGa_{1-_x}Ax emitter and the precise alignment of emitter-base junction are avoided. The proposed HEBT device exhibits significant advantages as (i) ease of fabrication, (ii) extremely small collector offset voltage. The common-emmiter current gain up to 180 with an offset voltage about 80 mV has been obtained in the nonoptimized device. Furthermore, an interesting controllable S-shaped negative-differential-resistance (NDR) phenomenon is observed under reverse operation mode. Therefore, the proposed HEBT may be employed as a multiple-function device which provides the transistor and switch actions on the same wafer, simultaneously.

Original language	English
Pages (from-to)	717-722
Number of pages	6
Journal	Solid State Electronics
Volume	34
Issue number	7
DOIs	https://doi.org/10.1016/0038-1101(91)90007-L
Publication status	Published - 1991 Jul

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(91)90007-L

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@article{056523bc5b124c978aaa483d56c65426,

title = "AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) prepared by molecular beam epitaxy",

abstract = "A novel AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) has been fabricated and demonstrated. The problems of conventional single heterojunction bipolar transistors (SHBTs) such as graded AlxGa1-xAx emitter and the precise alignment of emitter-base junction are avoided. The proposed HEBT device exhibits significant advantages as (i) ease of fabrication, (ii) extremely small collector offset voltage. The common-emmiter current gain up to 180 with an offset voltage about 80 mV has been obtained in the nonoptimized device. Furthermore, an interesting controllable S-shaped negative-differential-resistance (NDR) phenomenon is observed under reverse operation mode. Therefore, the proposed HEBT may be employed as a multiple-function device which provides the transistor and switch actions on the same wafer, simultaneously.",

author = "Liu, {Wen Chau} and Lour, {Wen Shiung}",

year = "1991",

month = jul,

doi = "10.1016/0038-1101(91)90007-L",

language = "English",

volume = "34",

pages = "717--722",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "7",

}

TY - JOUR

T1 - AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) prepared by molecular beam epitaxy

AU - Liu, Wen Chau

AU - Lour, Wen Shiung

PY - 1991/7

Y1 - 1991/7

N2 - A novel AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) has been fabricated and demonstrated. The problems of conventional single heterojunction bipolar transistors (SHBTs) such as graded AlxGa1-xAx emitter and the precise alignment of emitter-base junction are avoided. The proposed HEBT device exhibits significant advantages as (i) ease of fabrication, (ii) extremely small collector offset voltage. The common-emmiter current gain up to 180 with an offset voltage about 80 mV has been obtained in the nonoptimized device. Furthermore, an interesting controllable S-shaped negative-differential-resistance (NDR) phenomenon is observed under reverse operation mode. Therefore, the proposed HEBT may be employed as a multiple-function device which provides the transistor and switch actions on the same wafer, simultaneously.

AB - A novel AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) has been fabricated and demonstrated. The problems of conventional single heterojunction bipolar transistors (SHBTs) such as graded AlxGa1-xAx emitter and the precise alignment of emitter-base junction are avoided. The proposed HEBT device exhibits significant advantages as (i) ease of fabrication, (ii) extremely small collector offset voltage. The common-emmiter current gain up to 180 with an offset voltage about 80 mV has been obtained in the nonoptimized device. Furthermore, an interesting controllable S-shaped negative-differential-resistance (NDR) phenomenon is observed under reverse operation mode. Therefore, the proposed HEBT may be employed as a multiple-function device which provides the transistor and switch actions on the same wafer, simultaneously.

UR - http://www.scopus.com/inward/record.url?scp=0026186336&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026186336&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(91)90007-L

DO - 10.1016/0038-1101(91)90007-L

M3 - Article

AN - SCOPUS:0026186336

SN - 0038-1101

VL - 34

SP - 717

EP - 722

JO - Solid State Electronics

JF - Solid State Electronics

IS - 7

ER -

AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) prepared by molecular beam epitaxy

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