AlGaAs/InGaAs/GaAs metal-oxide-semiconductor-pseudomorphic high electron mobility transistors (MOS-PHEMTs) with Al2 O3 as a gate dielectric oxide prepared in low-temperature liquid phase deposition (LPD) are presented in this study. The Al2 O3 films on the GaAs substrates are characterized by means of x-ray photoelectron spectroscopy, Auger electron spectroscopy, scanning electron microscopy, Fourier transform infrared spectroscopy, and atomic force microscopy. The applications to depletion mode n -channel GaAs MOS-PHEMTs showed larger gate swing voltage, lower gate leakage current, higher breakdown voltage, higher drain current density, and maximum extrinsic transconductance compared to conventional AlGaAs/InGaAs PHEMTs. This demonstrates that LPD Al2 O3 could be a suitable candidate for future gate insulator applications.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)