@article{a5b1ad026b8745c392277e1432f1ca03,
title = "AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron- mobility transistor with low temperature liquid phase deposited Al 2O3 gate insulator",
abstract = "AlGaAs/InGaAs/GaAs metal-oxide-semiconductor-pseudomorphic high electron mobility transistors (MOS-PHEMTs) with Al2 O3 as a gate dielectric oxide prepared in low-temperature liquid phase deposition (LPD) are presented in this study. The Al2 O3 films on the GaAs substrates are characterized by means of x-ray photoelectron spectroscopy, Auger electron spectroscopy, scanning electron microscopy, Fourier transform infrared spectroscopy, and atomic force microscopy. The applications to depletion mode n -channel GaAs MOS-PHEMTs showed larger gate swing voltage, lower gate leakage current, higher breakdown voltage, higher drain current density, and maximum extrinsic transconductance compared to conventional AlGaAs/InGaAs PHEMTs. This demonstrates that LPD Al2 O3 could be a suitable candidate for future gate insulator applications.",
author = "Sarbani Basu and Singh, {Pramod K.} and Sze, {Po Wen} and Wang, {Yeong Her}",
note = "Funding Information: This work was supported in part by the National Science Council of Taiwan under Contract Nos. NSC-95-2221-E-006-428-MY3 and NSC95-2221-E-244-017. FIG. 1. AFM surface morphology of Al 2 O 3 oxide deposited on a GaAs substrate for different annealing temperatures. FIG. 2. XPS peak binding energy shifts of Al 2 O 3 on n -type GaAs substrate following different annealing temperatures: (a) Al 2 p peak binding energy and (b) O 1 s peak binding energy. FIG. 3. Typical AES depth profiles of an aluminum oxide film deposited on (a) GaAs substrate and (b) AlGaAs substrate. FIG. 4. Typical cross sectional SEM photograph of 90 nm Al 2 O 3 deposited on n- type GaAs substrate. FIG. 5. FTIR spectra of 23 nm LPD Al 2 O 3 deposited on GaAs substrate at different annealing temperatures such as (a) 150 ° C , (b) 300 ° C , and (c) 450 ° C . FIG. 6. Cross sectional schematics of LPD − Al 2 O 3 / AlGaAs / InGaAs MOS-PHEMT. FIG. 7. Measured C - V characteristics of MOS-PHEMT (solid line) and PHEMT (triangular line). FIG. 8. Measured I - V characteristics of the (a) MOS-PHEMT and (b) PHEMT. FIG. 9. Measured transconductance characteristics of MOS-PHEMT (solid line) and PHEMT (triangular line). FIG. 10. Gate leakage current of the MOS-PHEMT and the conventional PHEMT. FIG. 11. Measured drain breakdown voltage of MOS-PHEMT and PHEMT at pinch off condition. ",
year = "2008",
doi = "10.1063/1.2976318",
language = "English",
volume = "104",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "5",
}