AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron- mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric

Kuan Wei Lee, Po Wen Sze, Yeong-Her Wang, Mau-phon Houng

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The investigation describes AlGaAs/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistors (MOS-PHEMTs). The gate dielectric is obtained by oxidizing AlGaAs in liquid phase. The MOS-PHEMTs have a larger gate swing voltage, a lower gate leakage current and a higher breakdown voltage than their counterpart PHEMTs do.

Original languageEnglish
Pages (from-to)213-217
Number of pages5
JournalSolid-State Electronics
Volume49
Issue number2
DOIs
Publication statusPublished - 2005 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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