AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron- mobility transistor with low temperature liquid phase deposited Al ₂O₃ gate insulator

Physics & Astronomy

• aluminum gallium arsenides 91%
• atomic force microscopy 18%
• Auger spectroscopy 24%
• current density 17%
• depletion 21%
• electrical faults 23%
• electron spectroscopy 23%
• high current 44%
• high electron mobility transistors 100%
• infrared spectroscopy 21%
• insulators 71%
• leakage 20%
• liquid phases 82%
• low voltage 23%
• metal oxide semiconductors 99%
• oxides 15%
• photoelectron spectroscopy 19%
• scanning electron microscopy 15%
• transconductance 26%
• x ray spectroscopy 24%