AlGaAs/InGaAs/GaAs heterostructureemitter and heterostructure-base transistor (HEHBT)

Jung Hui Tsai, Shiou Ying Cheng, Lih Wen Laih, Wen Chau Liu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A new AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) has been fabricated and demonstrated. Owing to the presence of the InGaAs/GaAs heterostrucrure base, a quantum well is formed between the emitter-base (E-B) junction. This may enhance the E-B valence band discontinuity (ΔEv) and the confinement effect of minority carriers (holes) in the base region. Thus the emitter injection efficiency can be improved. A high current gain of 280 and an offset voltage lower than 100mV are obtained if the base metal is deposited on the InGaAs base layer.

Original languageEnglish
Pages (from-to)1720-1722
Number of pages3
JournalElectronics Letters
Volume32
Issue number18
DOIs
Publication statusPublished - 1996 Jan 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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