A new AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) has been fabricated and demonstrated. Owing to the presence of the InGaAs/GaAs heterostrucrure base, a quantum well is formed between the emitter-base (E-B) junction. This may enhance the E-B valence band discontinuity (ΔEv) and the confinement effect of minority carriers (holes) in the base region. Thus the emitter injection efficiency can be improved. A high current gain of 280 and an offset voltage lower than 100mV are obtained if the base metal is deposited on the InGaAs base layer.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering