AlGaAs/InGaAs/GaAs transistor-based hydrogen sensing device grown by metal organic chemical vapor deposition

Ching Wen Hung; Han Lien Lin; Yan Ying Tsai; Po Hsien Lai; Ssu I. Fu; Huey Ing Chen; Wen Chau Liu

doi:10.1143/JJAP.45.680

AlGaAs/InGaAs/GaAs transistor-based hydrogen sensing device grown by metal organic chemical vapor deposition

Ching Wen Hung, Han Lien Lin, Yan Ying Tsai, Po Hsien Lai, Ssu I. Fu, Huey Ing Chen, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

By combining the advantages of a catalytic metal Pd with a high-performance AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (PHEMT), an interesting hydrogen sensor is fabricated and demonstrated. For the proposed device, a 50 Å undoped GaAs cap layer is grown to prevent the Al _0.24Ga_0.76As Schottky layer from oxidizing and to reduce the Fermi level pinning effect. Experimentally, a high sensitivity S_J value of 275.8 μA/mm·ppm H₂/air can be obtained at a hydrogen concentration of 14 ppm H₂/air. Even at a very low hydrogen concentration (≤4.3 ppm H₂/air) at 30°C, a significant current variation can be observed. In addition, a fast transient response is found. The adsorption time constant τ_a becomes only 2 s as the operating temperature is elevated to 160°C. Therefore, the proposed device reveals the promise for high-performance hydrogen sensor applications.

Original language	English
Pages (from-to)	680-684
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	2 A
DOIs	https://doi.org/10.1143/JJAP.45.680
Publication status	Published - 2006 Feb 8

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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title = "AlGaAs/InGaAs/GaAs transistor-based hydrogen sensing device grown by metal organic chemical vapor deposition",

abstract = "By combining the advantages of a catalytic metal Pd with a high-performance AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (PHEMT), an interesting hydrogen sensor is fabricated and demonstrated. For the proposed device, a 50 {\AA} undoped GaAs cap layer is grown to prevent the Al 0.24Ga0.76As Schottky layer from oxidizing and to reduce the Fermi level pinning effect. Experimentally, a high sensitivity SJ value of 275.8 μA/mm·ppm H2/air can be obtained at a hydrogen concentration of 14 ppm H2/air. Even at a very low hydrogen concentration (≤4.3 ppm H2/air) at 30°C, a significant current variation can be observed. In addition, a fast transient response is found. The adsorption time constant τa becomes only 2 s as the operating temperature is elevated to 160°C. Therefore, the proposed device reveals the promise for high-performance hydrogen sensor applications.",

author = "Hung, {Ching Wen} and Lin, {Han Lien} and Tsai, {Yan Ying} and Lai, {Po Hsien} and Fu, {Ssu I.} and Chen, {Huey Ing} and Liu, {Wen Chau}",

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T1 - AlGaAs/InGaAs/GaAs transistor-based hydrogen sensing device grown by metal organic chemical vapor deposition

AU - Hung, Ching Wen

AU - Lin, Han Lien

AU - Tsai, Yan Ying

AU - Lai, Po Hsien

AU - Fu, Ssu I.

AU - Chen, Huey Ing

AU - Liu, Wen Chau

PY - 2006/2/8

Y1 - 2006/2/8

N2 - By combining the advantages of a catalytic metal Pd with a high-performance AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (PHEMT), an interesting hydrogen sensor is fabricated and demonstrated. For the proposed device, a 50 Å undoped GaAs cap layer is grown to prevent the Al 0.24Ga0.76As Schottky layer from oxidizing and to reduce the Fermi level pinning effect. Experimentally, a high sensitivity SJ value of 275.8 μA/mm·ppm H2/air can be obtained at a hydrogen concentration of 14 ppm H2/air. Even at a very low hydrogen concentration (≤4.3 ppm H2/air) at 30°C, a significant current variation can be observed. In addition, a fast transient response is found. The adsorption time constant τa becomes only 2 s as the operating temperature is elevated to 160°C. Therefore, the proposed device reveals the promise for high-performance hydrogen sensor applications.

AB - By combining the advantages of a catalytic metal Pd with a high-performance AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (PHEMT), an interesting hydrogen sensor is fabricated and demonstrated. For the proposed device, a 50 Å undoped GaAs cap layer is grown to prevent the Al 0.24Ga0.76As Schottky layer from oxidizing and to reduce the Fermi level pinning effect. Experimentally, a high sensitivity SJ value of 275.8 μA/mm·ppm H2/air can be obtained at a hydrogen concentration of 14 ppm H2/air. Even at a very low hydrogen concentration (≤4.3 ppm H2/air) at 30°C, a significant current variation can be observed. In addition, a fast transient response is found. The adsorption time constant τa becomes only 2 s as the operating temperature is elevated to 160°C. Therefore, the proposed device reveals the promise for high-performance hydrogen sensor applications.

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AlGaAs/InGaAs/GaAs transistor-based hydrogen sensing device grown by metal organic chemical vapor deposition

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