AlGaAsSb/InGaAsSb phototransistors for spectral range around 2 μm

O. V. Sulima; T. F. Refaat; M. G. Mauk; J. A. Cox; J. Li; S. K. Lohokare; M. N. Abedin; U. N. Singh; J. A. Rand

doi:10.1049/el:20040422

AlGaAsSb/InGaAsSb phototransistors for spectral range around 2 μm

O. V. Sulima
, T. F. Refaat
, M. G. Mauk
, J. A. Cox
, J. Li
, S. K. Lohokare
, M. N. Abedin
, U. N. Singh
, J. A. Rand

Department of Aeronautics and Astronautics

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The first AlGaAsSb/InGaAsSb phototransistors sensitive in the 2.0-2.1 μm spectral range are reported. These phototransistors exhibited both high gain and relatively low noise, and a record 2 μm detectivity of 3.9 × 10¹¹ cmHz^1/2/W was obtained at -20°C, which is equivalent to a noise-equivalent-power of 4.6 × 10^-14 W/Hz ^1/2.

Original language	English
Pages (from-to)	766-767
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	12
DOIs	https://doi.org/10.1049/el:20040422
Publication status	Published - 2004 Jun 10

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20040422

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@article{0b3bca27bc1f4f6eb0b860a225309fec,

title = "AlGaAsSb/InGaAsSb phototransistors for spectral range around 2 μm",

abstract = "The first AlGaAsSb/InGaAsSb phototransistors sensitive in the 2.0-2.1 μm spectral range are reported. These phototransistors exhibited both high gain and relatively low noise, and a record 2 μm detectivity of 3.9 × 1011 cmHz1/2/W was obtained at -20°C, which is equivalent to a noise-equivalent-power of 4.6 × 10-14 W/Hz 1/2.",

author = "Sulima, \{O. V.\} and Refaat, \{T. F.\} and Mauk, \{M. G.\} and Cox, \{J. A.\} and J. Li and Lohokare, \{S. K.\} and Abedin, \{M. N.\} and Singh, \{U. N.\} and Rand, \{J. A.\}",

year = "2004",

month = jun,

day = "10",

doi = "10.1049/el:20040422",

language = "English",

volume = "40",

pages = "766--767",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "12",

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TY - JOUR

T1 - AlGaAsSb/InGaAsSb phototransistors for spectral range around 2 μm

AU - Sulima, O. V.

AU - Refaat, T. F.

AU - Mauk, M. G.

AU - Cox, J. A.

AU - Li, J.

AU - Lohokare, S. K.

AU - Abedin, M. N.

AU - Singh, U. N.

AU - Rand, J. A.

PY - 2004/6/10

Y1 - 2004/6/10

N2 - The first AlGaAsSb/InGaAsSb phototransistors sensitive in the 2.0-2.1 μm spectral range are reported. These phototransistors exhibited both high gain and relatively low noise, and a record 2 μm detectivity of 3.9 × 1011 cmHz1/2/W was obtained at -20°C, which is equivalent to a noise-equivalent-power of 4.6 × 10-14 W/Hz 1/2.

AB - The first AlGaAsSb/InGaAsSb phototransistors sensitive in the 2.0-2.1 μm spectral range are reported. These phototransistors exhibited both high gain and relatively low noise, and a record 2 μm detectivity of 3.9 × 1011 cmHz1/2/W was obtained at -20°C, which is equivalent to a noise-equivalent-power of 4.6 × 10-14 W/Hz 1/2.

UR - https://www.scopus.com/pages/publications/3042691897

UR - https://www.scopus.com/pages/publications/3042691897#tab=citedBy

U2 - 10.1049/el:20040422

DO - 10.1049/el:20040422

M3 - Article

AN - SCOPUS:3042691897

SN - 0013-5194

VL - 40

SP - 766

EP - 767

JO - Electronics Letters

JF - Electronics Letters

IS - 12

ER -

AlGaAsSb/InGaAsSb phototransistors for spectral range around 2 μm

Abstract

All Science Journal Classification (ASJC) codes

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