AlGaInP-based LEDs with AuBe-diffused AZO/GaP current spreading layer

Shoou Jinn Chang; Xu Feng Zeng; Shih Chang Shei; Shuguang Li

doi:10.1109/JQE.2013.2280065

AlGaInP-based LEDs with AuBe-diffused AZO/GaP current spreading layer

Shoou Jinn Chang, Xu Feng Zeng, Shih Chang Shei, Shuguang Li

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We report the use of Al-doped ZnO (AZO) as the current spreading layer for AlGaInP-based light-emitting diodes (LEDs). It was found that AZO could form good ohmic contact with AuBe-diffused p-GaP. It was also found that the specific contact resistance could be further reduced from 2.68 X 10^-4 to 1.52 X 10^-4Ωcm² by performing rapid thermal annealing at 400°C for 5 min in N₂ ambient. Furthermore, it was found that output power of the LEDs with AZO current spreading layer was 6.2% larger than that of the LEDs with indium-tin-oxide current spreading layer. It was also found that LEDs with AZO current spreading layer also exhibit good electrical properties and good reliability.

Original language	English
Article number	6587778
Pages (from-to)	846-851
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	49
Issue number	10
DOIs	https://doi.org/10.1109/JQE.2013.2280065
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2013.2280065

Cite this

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title = "AlGaInP-based LEDs with AuBe-diffused AZO/GaP current spreading layer",

abstract = "We report the use of Al-doped ZnO (AZO) as the current spreading layer for AlGaInP-based light-emitting diodes (LEDs). It was found that AZO could form good ohmic contact with AuBe-diffused p-GaP. It was also found that the specific contact resistance could be further reduced from 2.68 X 10-4 to 1.52 X 10-4Ωcm2 by performing rapid thermal annealing at 400°C for 5 min in N2 ambient. Furthermore, it was found that output power of the LEDs with AZO current spreading layer was 6.2% larger than that of the LEDs with indium-tin-oxide current spreading layer. It was also found that LEDs with AZO current spreading layer also exhibit good electrical properties and good reliability.",

author = "Chang, {Shoou Jinn} and Zeng, {Xu Feng} and Shei, {Shih Chang} and Shuguang Li",

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journal = "IEEE Journal of Quantum Electronics",

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T1 - AlGaInP-based LEDs with AuBe-diffused AZO/GaP current spreading layer

AU - Chang, Shoou Jinn

AU - Zeng, Xu Feng

AU - Shei, Shih Chang

AU - Li, Shuguang

PY - 2013

Y1 - 2013

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AB - We report the use of Al-doped ZnO (AZO) as the current spreading layer for AlGaInP-based light-emitting diodes (LEDs). It was found that AZO could form good ohmic contact with AuBe-diffused p-GaP. It was also found that the specific contact resistance could be further reduced from 2.68 X 10-4 to 1.52 X 10-4Ωcm2 by performing rapid thermal annealing at 400°C for 5 min in N2 ambient. Furthermore, it was found that output power of the LEDs with AZO current spreading layer was 6.2% larger than that of the LEDs with indium-tin-oxide current spreading layer. It was also found that LEDs with AZO current spreading layer also exhibit good electrical properties and good reliability.

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AlGaInP-based LEDs with AuBe-diffused AZO/GaP current spreading layer

Abstract

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