AlGaInP-GaInP compressively strained multiquantum-well light-emitting diodes for polymer fiber application

S. J. Chang; C. S. Chang

doi:10.1109/68.681479

AlGaInP-GaInP compressively strained multiquantum-well light-emitting diodes for polymer fiber application

S. J. Chang, C. S. Chang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We have studied the optical properties of the Al-GaInP-GaInP light-emitting diodes (LED's), with a compressively strained multiquantum-well (CSMQW) active layer, emitting at 650 nm. It was found that by introducing a compressive strain into the MQW active layer, we can achieve a much faster operation speed and a higher output power. It was also found that a +0.33% compressive strain can reduce the 10%-90% rise time and/or fall time from 50 to 15 ns. Furthermore, the +0.33% compressive strain can also increase the output power of the MQW AlGaInP-GaInP LED by more than 40%. Such a high operation speed and high output power LED is potentially useful in polymer-based optical fiber communication.

Original language	English
Pages (from-to)	772-774
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	10
Issue number	6
DOIs	https://doi.org/10.1109/68.681479
Publication status	Published - 1998 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.681479

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@article{0ea81db6837c45dea9e2aa29063ae4ef,

title = "AlGaInP-GaInP compressively strained multiquantum-well light-emitting diodes for polymer fiber application",

abstract = "We have studied the optical properties of the Al-GaInP-GaInP light-emitting diodes (LED's), with a compressively strained multiquantum-well (CSMQW) active layer, emitting at 650 nm. It was found that by introducing a compressive strain into the MQW active layer, we can achieve a much faster operation speed and a higher output power. It was also found that a +0.33% compressive strain can reduce the 10%-90% rise time and/or fall time from 50 to 15 ns. Furthermore, the +0.33% compressive strain can also increase the output power of the MQW AlGaInP-GaInP LED by more than 40%. Such a high operation speed and high output power LED is potentially useful in polymer-based optical fiber communication.",

author = "Chang, {S. J.} and Chang, {C. S.}",

note = "Funding Information: Manuscript received December 1, 1997; revised February 17, 1998. This work was supported by National Science Council, R.O.C., under Contract NSC-85-2215-E-006-006 and Contract NSC-86-2622-E-005R. The authors are with the Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. Publisher Item Identifier S 1041-1135(98)03797-5.",

year = "1998",

month = jun,

doi = "10.1109/68.681479",

language = "English",

volume = "10",

pages = "772--774",

journal = "IEEE Photonics Technology Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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AU - Chang, S. J.

AU - Chang, C. S.

N1 - Funding Information: Manuscript received December 1, 1997; revised February 17, 1998. This work was supported by National Science Council, R.O.C., under Contract NSC-85-2215-E-006-006 and Contract NSC-86-2622-E-005R. The authors are with the Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. Publisher Item Identifier S 1041-1135(98)03797-5.

PY - 1998/6

Y1 - 1998/6

N2 - We have studied the optical properties of the Al-GaInP-GaInP light-emitting diodes (LED's), with a compressively strained multiquantum-well (CSMQW) active layer, emitting at 650 nm. It was found that by introducing a compressive strain into the MQW active layer, we can achieve a much faster operation speed and a higher output power. It was also found that a +0.33% compressive strain can reduce the 10%-90% rise time and/or fall time from 50 to 15 ns. Furthermore, the +0.33% compressive strain can also increase the output power of the MQW AlGaInP-GaInP LED by more than 40%. Such a high operation speed and high output power LED is potentially useful in polymer-based optical fiber communication.

AB - We have studied the optical properties of the Al-GaInP-GaInP light-emitting diodes (LED's), with a compressively strained multiquantum-well (CSMQW) active layer, emitting at 650 nm. It was found that by introducing a compressive strain into the MQW active layer, we can achieve a much faster operation speed and a higher output power. It was also found that a +0.33% compressive strain can reduce the 10%-90% rise time and/or fall time from 50 to 15 ns. Furthermore, the +0.33% compressive strain can also increase the output power of the MQW AlGaInP-GaInP LED by more than 40%. Such a high operation speed and high output power LED is potentially useful in polymer-based optical fiber communication.

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AlGaInP-GaInP compressively strained multiquantum-well light-emitting diodes for polymer fiber application

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