AlGaInp - Sapphire glue bonded light-emitting diodes

Shoou Jinn Chang; Yan Kuin Su; Timothy Yang; Chih Sung Chang; Tzer Peng Chen; Kuo Hsin Huang

doi:10.1109/JQE.2002.802970

AlGaInp - Sapphire glue bonded light-emitting diodes

Shoou Jinn Chang, Yan Kuin Su, Timothy Yang, Chih Sung Chang, Tzer Peng Chen, Kuo Hsin Huang

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A novel method was proposed to glue an AlGaInP-GaAs light-emitting diode (LED) onto a transparent sapphire substrate. The absorbing GaAs was subsequently removed by selective wet etching. It was found that the emission efficiency could reach 401 m/W under 20-mA current injection for the 622-nm glue bonded (GB) AlGaInP-sapphire LED. It was also found that these GB LEDs are highly reliable, with small variations in operation voltage and luminescence intensity during the life test.

Original language	English
Pages (from-to)	1390-1394
Number of pages	5
Journal	IEEE Journal of Quantum Electronics
Volume	38
Issue number	10
DOIs	https://doi.org/10.1109/JQE.2002.802970
Publication status	Published - 2002 Oct 1

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/JQE.2002.802970

Fingerprint Dive into the research topics of 'AlGaInp - Sapphire glue bonded light-emitting diodes'. Together they form a unique fingerprint.

Cite this

@article{466a1b8cc1014552b416f1365537c391,

title = "AlGaInp - Sapphire glue bonded light-emitting diodes",

abstract = "A novel method was proposed to glue an AlGaInP-GaAs light-emitting diode (LED) onto a transparent sapphire substrate. The absorbing GaAs was subsequently removed by selective wet etching. It was found that the emission efficiency could reach 401 m/W under 20-mA current injection for the 622-nm glue bonded (GB) AlGaInP-sapphire LED. It was also found that these GB LEDs are highly reliable, with small variations in operation voltage and luminescence intensity during the life test.",

author = "Chang, {Shoou Jinn} and Su, {Yan Kuin} and Timothy Yang and Chang, {Chih Sung} and Chen, {Tzer Peng} and Huang, {Kuo Hsin}",

year = "2002",

month = oct,

day = "1",

doi = "10.1109/JQE.2002.802970",

language = "English",

volume = "38",

pages = "1390--1394",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - AlGaInp - Sapphire glue bonded light-emitting diodes

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Yang, Timothy

AU - Chang, Chih Sung

AU - Chen, Tzer Peng

AU - Huang, Kuo Hsin

PY - 2002/10/1

Y1 - 2002/10/1

N2 - A novel method was proposed to glue an AlGaInP-GaAs light-emitting diode (LED) onto a transparent sapphire substrate. The absorbing GaAs was subsequently removed by selective wet etching. It was found that the emission efficiency could reach 401 m/W under 20-mA current injection for the 622-nm glue bonded (GB) AlGaInP-sapphire LED. It was also found that these GB LEDs are highly reliable, with small variations in operation voltage and luminescence intensity during the life test.

AB - A novel method was proposed to glue an AlGaInP-GaAs light-emitting diode (LED) onto a transparent sapphire substrate. The absorbing GaAs was subsequently removed by selective wet etching. It was found that the emission efficiency could reach 401 m/W under 20-mA current injection for the 622-nm glue bonded (GB) AlGaInP-sapphire LED. It was also found that these GB LEDs are highly reliable, with small variations in operation voltage and luminescence intensity during the life test.

UR - http://www.scopus.com/inward/record.url?scp=0036794459&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036794459&partnerID=8YFLogxK

U2 - 10.1109/JQE.2002.802970

DO - 10.1109/JQE.2002.802970

M3 - Article

AN - SCOPUS:0036794459

VL - 38

SP - 1390

EP - 1394

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 10

ER -