A novel method was proposed to glue an AlGaInP-GaAs light-emitting diode (LED) onto a transparent sapphire substrate. The absorbing GaAs was subsequently removed by selective wet etching. It was found that the emission efficiency could reach 401 m/W under 20-mA current injection for the 622-nm glue bonded (GB) AlGaInP-sapphire LED. It was also found that these GB LEDs are highly reliable, with small variations in operation voltage and luminescence intensity during the life test.
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering