AlGaInp - Sapphire glue bonded light-emitting diodes

Shoou Jinn Chang, Yan Kuin Su, Timothy Yang, Chih Sung Chang, Tzer Peng Chen, Kuo Hsin Huang

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


A novel method was proposed to glue an AlGaInP-GaAs light-emitting diode (LED) onto a transparent sapphire substrate. The absorbing GaAs was subsequently removed by selective wet etching. It was found that the emission efficiency could reach 401 m/W under 20-mA current injection for the 622-nm glue bonded (GB) AlGaInP-sapphire LED. It was also found that these GB LEDs are highly reliable, with small variations in operation voltage and luminescence intensity during the life test.

Original languageEnglish
Pages (from-to)1390-1394
Number of pages5
JournalIEEE Journal of Quantum Electronics
Issue number10
Publication statusPublished - 2002 Oct 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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