AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer

S. J. Chang; C. S. Chang; Y. K. Su; P. T. Chang; Y. R. Wu; K. H. Huang; T. P. Chen

doi:10.1109/68.618476

AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer

S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang, T. P. Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

A novel tensile strain barrier cladding (TSBC) structure is proposed which can effectively increase the potential barrier of the AlGaInP yellow-green light-emitting diodes (LED's). It was found that the electroluminescence intensity of the multiquantum well (MQW) + TSBC AlGaInP 573-nm LED is twice as large as that of the conventional MQW AlGaInP LED emitting at the same wavelength. It was also found that the MQW+TSBC AlGaInP LED is less heat sensitive than the MQW and MQW + multiquantum barrier (MQB) AlGaInP LED's. These results indicate that the MQW+TSBC LED is useful particularly under high-temperature operation.

Original language	English
Pages (from-to)	1199-1201
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	9
Issue number	9
DOIs	https://doi.org/10.1109/68.618476
Publication status	Published - 1997 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer",

abstract = "A novel tensile strain barrier cladding (TSBC) structure is proposed which can effectively increase the potential barrier of the AlGaInP yellow-green light-emitting diodes (LED's). It was found that the electroluminescence intensity of the multiquantum well (MQW) + TSBC AlGaInP 573-nm LED is twice as large as that of the conventional MQW AlGaInP LED emitting at the same wavelength. It was also found that the MQW+TSBC AlGaInP LED is less heat sensitive than the MQW and MQW + multiquantum barrier (MQB) AlGaInP LED's. These results indicate that the MQW+TSBC LED is useful particularly under high-temperature operation.",

author = "Chang, {S. J.} and Chang, {C. S.} and Su, {Y. K.} and Chang, {P. T.} and Wu, {Y. R.} and Huang, {K. H.} and Chen, {T. P.}",

note = "Funding Information: Manuscript received March 24, 1997; revised May 29, 1997. The work of S. J. Chang, C. S. Chang, and Y. K. Su was supported by National Science Council of Taiwan, R.O.C., under Contract NSC-85-2215-E-006-006. S. J. Chang, C. S. Chang, and Y. K. Su are with the Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen are with United Epitaxy Company, Ltd., Hsinchu 300, Taiwan, R.O.C. Publisher Item Identifier S 1041-1135(97)06341-6.",

year = "1997",

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language = "English",

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T1 - AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer

AU - Chang, S. J.

AU - Chang, C. S.

AU - Su, Y. K.

AU - Chang, P. T.

AU - Wu, Y. R.

AU - Huang, K. H.

AU - Chen, T. P.

N1 - Funding Information: Manuscript received March 24, 1997; revised May 29, 1997. The work of S. J. Chang, C. S. Chang, and Y. K. Su was supported by National Science Council of Taiwan, R.O.C., under Contract NSC-85-2215-E-006-006. S. J. Chang, C. S. Chang, and Y. K. Su are with the Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen are with United Epitaxy Company, Ltd., Hsinchu 300, Taiwan, R.O.C. Publisher Item Identifier S 1041-1135(97)06341-6.

PY - 1997/9

Y1 - 1997/9

N2 - A novel tensile strain barrier cladding (TSBC) structure is proposed which can effectively increase the potential barrier of the AlGaInP yellow-green light-emitting diodes (LED's). It was found that the electroluminescence intensity of the multiquantum well (MQW) + TSBC AlGaInP 573-nm LED is twice as large as that of the conventional MQW AlGaInP LED emitting at the same wavelength. It was also found that the MQW+TSBC AlGaInP LED is less heat sensitive than the MQW and MQW + multiquantum barrier (MQB) AlGaInP LED's. These results indicate that the MQW+TSBC LED is useful particularly under high-temperature operation.

AB - A novel tensile strain barrier cladding (TSBC) structure is proposed which can effectively increase the potential barrier of the AlGaInP yellow-green light-emitting diodes (LED's). It was found that the electroluminescence intensity of the multiquantum well (MQW) + TSBC AlGaInP 573-nm LED is twice as large as that of the conventional MQW AlGaInP LED emitting at the same wavelength. It was also found that the MQW+TSBC AlGaInP LED is less heat sensitive than the MQW and MQW + multiquantum barrier (MQB) AlGaInP LED's. These results indicate that the MQW+TSBC LED is useful particularly under high-temperature operation.

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AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer

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