AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer

S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang, T. P. Chen

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

A novel tensile strain barrier cladding (TSBC) structure is proposed which can effectively increase the potential barrier of the AlGaInP yellow-green light-emitting diodes (LED's). It was found that the electroluminescence intensity of the multiquantum well (MQW) + TSBC AlGaInP 573-nm LED is twice as large as that of the conventional MQW AlGaInP LED emitting at the same wavelength. It was also found that the MQW+TSBC AlGaInP LED is less heat sensitive than the MQW and MQW + multiquantum barrier (MQB) AlGaInP LED's. These results indicate that the MQW+TSBC LED is useful particularly under high-temperature operation.

Original languageEnglish
Pages (from-to)1199-1201
Number of pages3
JournalIEEE Photonics Technology Letters
Volume9
Issue number9
DOIs
Publication statusPublished - 1997 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer'. Together they form a unique fingerprint.

Cite this