AlGaInP/GaP heterostructures bonded with si substrate to serve as solar cells and light emitting diodes

Liang Jyi Yan, Chih Chiao Yang, Ming Lun Lee, Shang Ju Tu, Chih Sung Chang, Jinn Kong Sheu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

In this study, an AlGaInP/GaP-based heterostructure featuring a silicon substrate and a SiO2 /indium tin oxide/Ag omnidirectional reflector, using a metal-to-metal bonding technique, serves as a dual-function device operating in light emitting and photovoltaic modes. To enhance the light extraction efficiency and conversion efficiency, AlGaInP/Si heterojunction devices with a periodic texture applied to the n- (Al0.5 Ga 0.5)0.5 In0.5 P surface layer using photolithography and a wet etching process are also presented. Using the light emitting mode and a 350 mA current injection, the external quantum efficiencies of AlGaInP/Si light emitting diodes (LEDs) with (LED-I) and without (LED-II) a textured surface are measured at approximately 17.3 and 11.8%, respectively. The enhancement of the output power in LED-I can be attributed to a multitude of bowl-shaped notches on the surface, resulting in a reduction in the reabsorption probability of photons inside the device because the photon path length of LED-I is shorter than LED-II before photons escape into free space. When devices are operated in a photovoltaic mode, measured under an air mass 1.5 condition, the typical efficiency and fill factor are around 4.67 and 83%, respectively, for devices with a textured surface.

Original languageEnglish
Pages (from-to)H452-H454
JournalJournal of the Electrochemical Society
Volume157
Issue number4
DOIs
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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