AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology

Shoou Jinn Chang, Jinn Kong Sheu, Yan Kuin Su, Ming Jiunn Jou, Gou Chung Chi

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13 Citations (Scopus)


An AlGaInP/GaP light-emitting diode was fabricated by wafer direct bonding technique. The device was grown on GaAs substrate by metalorganic vapor phase epitaxy (MOVPE). After bonding the n-GaP substrate on top of the epitaxial layers, the original GaAs substrate was removed. The luminous intensity of this wafer-bonded device is around 60mcd/Sr at an operation current of 20 mA. It is about two times brighter than the conventional device with absorbing GaAs substrate. The large lattice constant mismatch (3.6%) between wafer-bonded GaP substrate and GaInP did not degrade the device characteristics.

Original languageEnglish
Pages (from-to)4199-4202
Number of pages4
JournalJapanese Journal of Applied Physics
Issue number8
Publication statusPublished - 1996 Aug

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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