An AlGaInP/GaP light-emitting diode was fabricated by wafer direct bonding technique. The device was grown on GaAs substrate by metalorganic vapor phase epitaxy (MOVPE). After bonding the n-GaP substrate on top of the epitaxial layers, the original GaAs substrate was removed. The luminous intensity of this wafer-bonded device is around 60mcd/Sr at an operation current of 20 mA. It is about two times brighter than the conventional device with absorbing GaAs substrate. The large lattice constant mismatch (3.6%) between wafer-bonded GaP substrate and GaInP did not degrade the device characteristics.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 1996 Aug|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)