AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology

Shoou Jinn Chang; Jinn Kong Sheu; Yan Kuin Su; Ming Jiunn Jou; Gou Chung Chi

doi:10.1143/jjap.35.4199

AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology

Shoou Jinn Chang, Jinn Kong Sheu, Yan Kuin Su, Ming Jiunn Jou, Gou Chung Chi

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

An AlGaInP/GaP light-emitting diode was fabricated by wafer direct bonding technique. The device was grown on GaAs substrate by metalorganic vapor phase epitaxy (MOVPE). After bonding the n-GaP substrate on top of the epitaxial layers, the original GaAs substrate was removed. The luminous intensity of this wafer-bonded device is around 60mcd/S_r at an operation current of 20 mA. It is about two times brighter than the conventional device with absorbing GaAs substrate. The large lattice constant mismatch (3.6%) between wafer-bonded GaP substrate and GaInP did not degrade the device characteristics.

Original language	English
Pages (from-to)	4199-4202
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	35
Issue number	8
DOIs	https://doi.org/10.1143/jjap.35.4199
Publication status	Published - 1996 Aug

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

Access to Document

10.1143/jjap.35.4199

Cite this

@article{0e1df4953e5142da85b2f4330dbc8953,

title = "AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology",

abstract = "An AlGaInP/GaP light-emitting diode was fabricated by wafer direct bonding technique. The device was grown on GaAs substrate by metalorganic vapor phase epitaxy (MOVPE). After bonding the n-GaP substrate on top of the epitaxial layers, the original GaAs substrate was removed. The luminous intensity of this wafer-bonded device is around 60mcd/Sr at an operation current of 20 mA. It is about two times brighter than the conventional device with absorbing GaAs substrate. The large lattice constant mismatch (3.6%) between wafer-bonded GaP substrate and GaInP did not degrade the device characteristics.",

author = "Chang, {Shoou Jinn} and Sheu, {Jinn Kong} and Su, {Yan Kuin} and Jou, {Ming Jiunn} and Chi, {Gou Chung}",

year = "1996",

month = aug,

doi = "10.1143/jjap.35.4199",

language = "English",

volume = "35",

pages = "4199--4202",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "8",

}

TY - JOUR

T1 - AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology

AU - Chang, Shoou Jinn

AU - Sheu, Jinn Kong

AU - Su, Yan Kuin

AU - Jou, Ming Jiunn

AU - Chi, Gou Chung

PY - 1996/8

Y1 - 1996/8

N2 - An AlGaInP/GaP light-emitting diode was fabricated by wafer direct bonding technique. The device was grown on GaAs substrate by metalorganic vapor phase epitaxy (MOVPE). After bonding the n-GaP substrate on top of the epitaxial layers, the original GaAs substrate was removed. The luminous intensity of this wafer-bonded device is around 60mcd/Sr at an operation current of 20 mA. It is about two times brighter than the conventional device with absorbing GaAs substrate. The large lattice constant mismatch (3.6%) between wafer-bonded GaP substrate and GaInP did not degrade the device characteristics.

AB - An AlGaInP/GaP light-emitting diode was fabricated by wafer direct bonding technique. The device was grown on GaAs substrate by metalorganic vapor phase epitaxy (MOVPE). After bonding the n-GaP substrate on top of the epitaxial layers, the original GaAs substrate was removed. The luminous intensity of this wafer-bonded device is around 60mcd/Sr at an operation current of 20 mA. It is about two times brighter than the conventional device with absorbing GaAs substrate. The large lattice constant mismatch (3.6%) between wafer-bonded GaP substrate and GaInP did not degrade the device characteristics.

UR - http://www.scopus.com/inward/record.url?scp=0030205572&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030205572&partnerID=8YFLogxK

U2 - 10.1143/jjap.35.4199

DO - 10.1143/jjap.35.4199

M3 - Article

AN - SCOPUS:0030205572

SN - 0021-4922

VL - 35

SP - 4199

EP - 4202

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 8

ER -

AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this