AlGaN-based ultraviolet photodetector with micropillar structures

Wei-Chi Lai; Li Chi Peng; Chien Chun Chen; Jinn-Kong Sheu; Shih Chang Shei

doi:10.1063/1.3354018

AlGaN-based ultraviolet photodetector with micropillar structures

Wei-Chi Lai, Li Chi Peng, Chien Chun Chen, Jinn-Kong Sheu, Shih Chang Shei

Department of Photonics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We demonstrated a single AlGaN layer with two different Al contents on the GaN μ -pillars template. It was found by the selective wavelength spatial cathodoluminescence images that the emission wavelengths of the AlGaN layer were at 345 and 325 nm on the side of the cone and on the top and valley surface of pillars, respectively. The Schottky-type photodetectors were also demonstrated on double Al contents of deposited AlGaN on GaN micropillar templates. The three steps of responses occurred at about 326, 346, and 356 nm with responsivities of 1.1× 10^-2, 5.9× 10^-3, and 4.04× 10^-3 A/W, respectively.

Original language	English
Article number	102104
Journal	Applied Physics Letters
Volume	96
Issue number	10
DOIs	https://doi.org/10.1063/1.3354018
Publication status	Published - 2010 Mar 26

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3354018

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title = "AlGaN-based ultraviolet photodetector with micropillar structures",

abstract = "We demonstrated a single AlGaN layer with two different Al contents on the GaN μ -pillars template. It was found by the selective wavelength spatial cathodoluminescence images that the emission wavelengths of the AlGaN layer were at 345 and 325 nm on the side of the cone and on the top and valley surface of pillars, respectively. The Schottky-type photodetectors were also demonstrated on double Al contents of deposited AlGaN on GaN micropillar templates. The three steps of responses occurred at about 326, 346, and 356 nm with responsivities of 1.1× 10-2, 5.9× 10-3, and 4.04× 10-3 A/W, respectively.",

author = "Wei-Chi Lai and Peng, {Li Chi} and Chen, {Chien Chun} and Jinn-Kong Sheu and Shei, {Shih Chang}",

year = "2010",

month = mar,

day = "26",

doi = "10.1063/1.3354018",

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volume = "96",

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TY - JOUR

T1 - AlGaN-based ultraviolet photodetector with micropillar structures

AU - Lai, Wei-Chi

AU - Peng, Li Chi

AU - Chen, Chien Chun

AU - Sheu, Jinn-Kong

AU - Shei, Shih Chang

PY - 2010/3/26

Y1 - 2010/3/26

N2 - We demonstrated a single AlGaN layer with two different Al contents on the GaN μ -pillars template. It was found by the selective wavelength spatial cathodoluminescence images that the emission wavelengths of the AlGaN layer were at 345 and 325 nm on the side of the cone and on the top and valley surface of pillars, respectively. The Schottky-type photodetectors were also demonstrated on double Al contents of deposited AlGaN on GaN micropillar templates. The three steps of responses occurred at about 326, 346, and 356 nm with responsivities of 1.1× 10-2, 5.9× 10-3, and 4.04× 10-3 A/W, respectively.

AB - We demonstrated a single AlGaN layer with two different Al contents on the GaN μ -pillars template. It was found by the selective wavelength spatial cathodoluminescence images that the emission wavelengths of the AlGaN layer were at 345 and 325 nm on the side of the cone and on the top and valley surface of pillars, respectively. The Schottky-type photodetectors were also demonstrated on double Al contents of deposited AlGaN on GaN micropillar templates. The three steps of responses occurred at about 326, 346, and 356 nm with responsivities of 1.1× 10-2, 5.9× 10-3, and 4.04× 10-3 A/W, respectively.

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