AlGaN-based ultraviolet photodetector with micropillar structures

Wei-Chi Lai, Li Chi Peng, Chien Chun Chen, Jinn-Kong Sheu, Shih Chang Shei

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5 Citations (Scopus)


We demonstrated a single AlGaN layer with two different Al contents on the GaN μ -pillars template. It was found by the selective wavelength spatial cathodoluminescence images that the emission wavelengths of the AlGaN layer were at 345 and 325 nm on the side of the cone and on the top and valley surface of pillars, respectively. The Schottky-type photodetectors were also demonstrated on double Al contents of deposited AlGaN on GaN micropillar templates. The three steps of responses occurred at about 326, 346, and 356 nm with responsivities of 1.1× 10-2, 5.9× 10-3, and 4.04× 10-3 A/W, respectively.

Original languageEnglish
Article number102104
JournalApplied Physics Letters
Issue number10
Publication statusPublished - 2010 Mar 26

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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