AlGaN films grown on (0001) sapphire by a two-step method

C. F. Shih; N. C. Chen; S. Y. Lin; K. S. Liu

doi:10.1063/1.1931058

AlGaN films grown on (0001) sapphire by a two-step method

C. F. Shih, N. C. Chen, S. Y. Lin, K. S. Liu

Doctoral Degree Program on Nano-Integrated-Circuit Engineering

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

A two-step growth method, commonly used for GaN on sapphire, was applied to grow high-quality Al0.2 Ga0.8 N on sapphire. Comparing to the one grown on a low-temperature grown AlN buffer layer, the decomposition, recrystallization, and islands coalescence processes of the two-step growth increased the surface flatness, the crystal quality, the electrical property, suppressed the phase separation, and released the biaxial tensile strain. A 2.0 μm thick high-quality crack-free nearly GaN-free Al0.2 Ga0.8 N epilayer was obtained.

Original language	English
Article number	211103
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	21
DOIs	https://doi.org/10.1063/1.1931058
Publication status	Published - 2005 May 23

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1931058

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title = "AlGaN films grown on (0001) sapphire by a two-step method",

abstract = "A two-step growth method, commonly used for GaN on sapphire, was applied to grow high-quality Al0.2 Ga0.8 N on sapphire. Comparing to the one grown on a low-temperature grown AlN buffer layer, the decomposition, recrystallization, and islands coalescence processes of the two-step growth increased the surface flatness, the crystal quality, the electrical property, suppressed the phase separation, and released the biaxial tensile strain. A 2.0 μm thick high-quality crack-free nearly GaN-free Al0.2 Ga0.8 N epilayer was obtained.",

author = "Shih, {C. F.} and Chen, {N. C.} and Lin, {S. Y.} and Liu, {K. S.}",

note = "Funding Information: The authors would like to thank the National Science Council of the Republic of China for financially supporting this research under Contract No. NSC93-2745-L-182-002 and Dr. Y. F. Chen for PL measurement.",

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AU - Shih, C. F.

AU - Chen, N. C.

AU - Lin, S. Y.

AU - Liu, K. S.

N1 - Funding Information: The authors would like to thank the National Science Council of the Republic of China for financially supporting this research under Contract No. NSC93-2745-L-182-002 and Dr. Y. F. Chen for PL measurement.

PY - 2005/5/23

Y1 - 2005/5/23

N2 - A two-step growth method, commonly used for GaN on sapphire, was applied to grow high-quality Al0.2 Ga0.8 N on sapphire. Comparing to the one grown on a low-temperature grown AlN buffer layer, the decomposition, recrystallization, and islands coalescence processes of the two-step growth increased the surface flatness, the crystal quality, the electrical property, suppressed the phase separation, and released the biaxial tensile strain. A 2.0 μm thick high-quality crack-free nearly GaN-free Al0.2 Ga0.8 N epilayer was obtained.

AB - A two-step growth method, commonly used for GaN on sapphire, was applied to grow high-quality Al0.2 Ga0.8 N on sapphire. Comparing to the one grown on a low-temperature grown AlN buffer layer, the decomposition, recrystallization, and islands coalescence processes of the two-step growth increased the surface flatness, the crystal quality, the electrical property, suppressed the phase separation, and released the biaxial tensile strain. A 2.0 μm thick high-quality crack-free nearly GaN-free Al0.2 Ga0.8 N epilayer was obtained.

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AlGaN films grown on (0001) sapphire by a two-step method

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