AlGaN films grown on (0001) sapphire by a two-step method

C. F. Shih, N. C. Chen, S. Y. Lin, K. S. Liu

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)


A two-step growth method, commonly used for GaN on sapphire, was applied to grow high-quality Al0.2 Ga0.8 N on sapphire. Comparing to the one grown on a low-temperature grown AlN buffer layer, the decomposition, recrystallization, and islands coalescence processes of the two-step growth increased the surface flatness, the crystal quality, the electrical property, suppressed the phase separation, and released the biaxial tensile strain. A 2.0 μm thick high-quality crack-free nearly GaN-free Al0.2 Ga0.8 N epilayer was obtained.

Original languageEnglish
Article number211103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 2005 May 23

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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