TY - JOUR
T1 - AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers
AU - Ko, T. K.
AU - Chang, Shoou-Jinn
AU - Su, Y. K.
AU - Lee, M. L.
AU - Chang, C. S.
AU - Lin, Yu-Cheng
AU - Shei, S. C.
AU - Sheu, Jinn-Kong
AU - Chen, W. S.
AU - Shen, C. F.
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2005/9/15
Y1 - 2005/9/15
N2 - AlGaN/GaN Schottky-barrier photodetectors with 7.5, 15, 30 and 60-nm-thick low temperature GaN cap layers were fabricated. It was found that dark currents were small for these detectors. With an incident light wavelength of 320 nm, it was found that measured peak responsivities were 0.07, 0.05 and 0.03 A/W while UV to visible rejection ratios were 700, 160 and 20 for the photodetectors with 15, 30 and 60-nm-thick low temperature GaN cap layers, respectively.
AB - AlGaN/GaN Schottky-barrier photodetectors with 7.5, 15, 30 and 60-nm-thick low temperature GaN cap layers were fabricated. It was found that dark currents were small for these detectors. With an incident light wavelength of 320 nm, it was found that measured peak responsivities were 0.07, 0.05 and 0.03 A/W while UV to visible rejection ratios were 700, 160 and 20 for the photodetectors with 15, 30 and 60-nm-thick low temperature GaN cap layers, respectively.
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U2 - 10.1016/j.jcrysgro.2005.05.067
DO - 10.1016/j.jcrysgro.2005.05.067
M3 - Article
AN - SCOPUS:24144454603
SN - 0022-0248
VL - 283
SP - 68
EP - 71
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-2
ER -