TY - JOUR
T1 - AlGaN metal-semiconductor-metal photodetectors with low-temperature AlN cap layer and recessed electrodes
AU - Chen, Chin Hsiang
AU - Chang, Shoou Jinn
AU - Wu, Ming Hsien
AU - Tsai, Sung Yi
AU - Chien, Hsiu Ju
PY - 2010/4/1
Y1 - 2010/4/1
N2 - Al0.16Ga0.84N 320nm near-solar-blind ultraviolet (UV) metal-semiconductor-metal photodetectors (MSM-PDs) with a low-temperature AlN (LTAlN) layer and inductively coupled plasma (ICP) recessed electrodes were successfully fabricated. Compared with the conventional MSM-PDs, it was found that the measured photocurrent was much larger for the MSM-PD with the LT-AlN layer and ICP recessed electrodes. The responsivity of the MSM-PD with the LT-AlN layer and ICP recessed electrodes was also found to be larger, which could be attributed to the ICPetching-induced photoconductive gain.
AB - Al0.16Ga0.84N 320nm near-solar-blind ultraviolet (UV) metal-semiconductor-metal photodetectors (MSM-PDs) with a low-temperature AlN (LTAlN) layer and inductively coupled plasma (ICP) recessed electrodes were successfully fabricated. Compared with the conventional MSM-PDs, it was found that the measured photocurrent was much larger for the MSM-PD with the LT-AlN layer and ICP recessed electrodes. The responsivity of the MSM-PD with the LT-AlN layer and ICP recessed electrodes was also found to be larger, which could be attributed to the ICPetching-induced photoconductive gain.
UR - http://www.scopus.com/inward/record.url?scp=77952731346&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77952731346&partnerID=8YFLogxK
U2 - 10.1143/JJAP.49.04DG05
DO - 10.1143/JJAP.49.04DG05
M3 - Article
AN - SCOPUS:77952731346
VL - 49
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 4 PART 2
M1 - 04DG05
ER -