Abstract
Al0.16Ga0.84N 320nm near-solar-blind ultraviolet (UV) metal-semiconductor-metal photodetectors (MSM-PDs) with a low-temperature AlN (LTAlN) layer and inductively coupled plasma (ICP) recessed electrodes were successfully fabricated. Compared with the conventional MSM-PDs, it was found that the measured photocurrent was much larger for the MSM-PD with the LT-AlN layer and ICP recessed electrodes. The responsivity of the MSM-PD with the LT-AlN layer and ICP recessed electrodes was also found to be larger, which could be attributed to the ICPetching-induced photoconductive gain.
Original language | English |
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Article number | 04DG05 |
Journal | Japanese journal of applied physics |
Volume | 49 |
Issue number | 4 PART 2 |
DOIs | |
Publication status | Published - 2010 Apr |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)