AlGaN MSM photodetectors with recess-etched LT-AlGaN cap layers

H. Hung, Shoou-Jinn Chang, Yu-Cheng Lin, H. Kuan, R. M. Lin

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


AlGaN metal-semiconductor-metal photodetectors with recess-etched low temperature (LT)-AlGaN cap layers were fabricated. It was found that photocurrent can be enhanced and a sharp cut-off can be achieved by etching away the LT-AlGaN cap layer in the light absorption region while keeping the LT-AIGaN cap layer under the contact electrodes. It was also found that dark leakage current can be reduced by passivating the damaged surface with SiO 2 film. Furthermore, it was found that, a photocurrent to dark current contrast ratio of 688 and ultraviolet to visible contrast ratio of 141 was achieved from the recess-etched photodetector with passivation.

Original languageEnglish
Pages (from-to)147-149
Number of pages3
JournalIET Optoelectronics
Issue number4
Publication statusPublished - 2007 Sep 11

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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