Abstract
AlGaN ultraviolet metal-semiconductor-metal photodetectors (PDs) with low temperature (LT)-AlN and LT-GaN cap layers were prepared on Si substrates. Unlike PDs prepared on sapphire substrates, no markedly reduction in dark current was observed from the PD with LT-GaN cap layer. With an incident wavelength of 305 nm and an applied bias of 5 V, it was found that peak responsivities were 0.02, 0.005 and 0.007 A/W for the PDs with LT-AlN cap layer, with LT-GaN cap layer and without cap layer, respectively. The corresponding detectivities were 2.2 × 1010, 1.36 × 1010 and 1.55 × 1010 cm Hz0.5 W-1, respectively.
Original language | English |
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Pages (from-to) | 502-506 |
Number of pages | 5 |
Journal | Sensors and Actuators, A: Physical |
Volume | 135 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2007 Apr 15 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering