TY - JOUR
T1 - AlGaN ultraviolet metal-semiconductor-metal photodetectors with low-temperature-grown cap layers
AU - Chang, Shoou Jinn
AU - Hung, Hung
AU - Lin, Yi Chao
AU - Wu, Ming Hsien
AU - Kuan, Hon
AU - Lin, Ray Ming
PY - 2007/4/24
Y1 - 2007/4/24
N2 - We report the fabrication of AlGaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with low temperature (LT)-AlGaN and LT-GaN cap layers. It was found that the dark currents were 8.3 × 10-9, 3.3 × 10-12, and 1.1 × 10-12A under 5 V applied bias while the effective Schottky barrier heights were 0.781, 0.992, and 0.998 eV for the AlGaN photodetectors without a cap layer, with a LT-GaN cap layer and with a LT-AlGaN cap layer, respectively. It was also found that the maximum responsivities were 0.0361. 0.0328. and 0.0315 A/W for the AlGaN photodetectors without the cap layer, with the LT-GaN cap layer and with the LT-AlGaN cap layer, respectively.
AB - We report the fabrication of AlGaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with low temperature (LT)-AlGaN and LT-GaN cap layers. It was found that the dark currents were 8.3 × 10-9, 3.3 × 10-12, and 1.1 × 10-12A under 5 V applied bias while the effective Schottky barrier heights were 0.781, 0.992, and 0.998 eV for the AlGaN photodetectors without a cap layer, with a LT-GaN cap layer and with a LT-AlGaN cap layer, respectively. It was also found that the maximum responsivities were 0.0361. 0.0328. and 0.0315 A/W for the AlGaN photodetectors without the cap layer, with the LT-GaN cap layer and with the LT-AlGaN cap layer, respectively.
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U2 - 10.1143/JJAP.46.2471
DO - 10.1143/JJAP.46.2471
M3 - Article
AN - SCOPUS:34547898464
VL - 46
SP - 2471
EP - 2473
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 4 B
ER -