AlGaN ultraviolet metal-semiconductor-metal photodetectors with low-temperature-grown cap layers

Shoou-Jinn Chang; Hung Hung; Yi Chao Lin; Ming Hsien Wu; Hon Kuan; Ray Ming Lin

doi:10.1143/JJAP.46.2471

AlGaN ultraviolet metal-semiconductor-metal photodetectors with low-temperature-grown cap layers

Shoou-Jinn Chang, Hung Hung, Yi Chao Lin, Ming Hsien Wu, Hon Kuan, Ray Ming Lin

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report the fabrication of AlGaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with low temperature (LT)-AlGaN and LT-GaN cap layers. It was found that the dark currents were 8.3 × 10^-9, 3.3 × 10^-12, and 1.1 × 10^-12A under 5 V applied bias while the effective Schottky barrier heights were 0.781, 0.992, and 0.998 eV for the AlGaN photodetectors without a cap layer, with a LT-GaN cap layer and with a LT-AlGaN cap layer, respectively. It was also found that the maximum responsivities were 0.0361. 0.0328. and 0.0315 A/W for the AlGaN photodetectors without the cap layer, with the LT-GaN cap layer and with the LT-AlGaN cap layer, respectively.

Original language	English
Pages (from-to)	2471-2473
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.46.2471
Publication status	Published - 2007 Apr 24

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "AlGaN ultraviolet metal-semiconductor-metal photodetectors with low-temperature-grown cap layers",

abstract = "We report the fabrication of AlGaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with low temperature (LT)-AlGaN and LT-GaN cap layers. It was found that the dark currents were 8.3 × 10-9, 3.3 × 10-12, and 1.1 × 10-12A under 5 V applied bias while the effective Schottky barrier heights were 0.781, 0.992, and 0.998 eV for the AlGaN photodetectors without a cap layer, with a LT-GaN cap layer and with a LT-AlGaN cap layer, respectively. It was also found that the maximum responsivities were 0.0361. 0.0328. and 0.0315 A/W for the AlGaN photodetectors without the cap layer, with the LT-GaN cap layer and with the LT-AlGaN cap layer, respectively.",

author = "Shoou-Jinn Chang and Hung Hung and Lin, {Yi Chao} and Wu, {Ming Hsien} and Hon Kuan and Lin, {Ray Ming}",

year = "2007",

month = apr,

day = "24",

doi = "10.1143/JJAP.46.2471",

language = "English",

volume = "46",

pages = "2471--2473",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

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AlGaN ultraviolet metal-semiconductor-metal photodetectors with low-temperature-grown cap layers. / Chang, Shoou-Jinn; Hung, Hung; Lin, Yi Chao; Wu, Ming Hsien; Kuan, Hon; Lin, Ray Ming.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 4 B, 24.04.2007, p. 2471-2473.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - AlGaN ultraviolet metal-semiconductor-metal photodetectors with low-temperature-grown cap layers

AU - Chang, Shoou-Jinn

AU - Hung, Hung

AU - Lin, Yi Chao

AU - Wu, Ming Hsien

AU - Kuan, Hon

AU - Lin, Ray Ming

PY - 2007/4/24

Y1 - 2007/4/24

N2 - We report the fabrication of AlGaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with low temperature (LT)-AlGaN and LT-GaN cap layers. It was found that the dark currents were 8.3 × 10-9, 3.3 × 10-12, and 1.1 × 10-12A under 5 V applied bias while the effective Schottky barrier heights were 0.781, 0.992, and 0.998 eV for the AlGaN photodetectors without a cap layer, with a LT-GaN cap layer and with a LT-AlGaN cap layer, respectively. It was also found that the maximum responsivities were 0.0361. 0.0328. and 0.0315 A/W for the AlGaN photodetectors without the cap layer, with the LT-GaN cap layer and with the LT-AlGaN cap layer, respectively.

AB - We report the fabrication of AlGaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with low temperature (LT)-AlGaN and LT-GaN cap layers. It was found that the dark currents were 8.3 × 10-9, 3.3 × 10-12, and 1.1 × 10-12A under 5 V applied bias while the effective Schottky barrier heights were 0.781, 0.992, and 0.998 eV for the AlGaN photodetectors without a cap layer, with a LT-GaN cap layer and with a LT-AlGaN cap layer, respectively. It was also found that the maximum responsivities were 0.0361. 0.0328. and 0.0315 A/W for the AlGaN photodetectors without the cap layer, with the LT-GaN cap layer and with the LT-AlGaN cap layer, respectively.

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