AlGaN ultraviolet metal-semiconductor-metal photodetectors with low-temperature-grown cap layers

Shoou-Jinn Chang, Hung Hung, Yi Chao Lin, Ming Hsien Wu, Hon Kuan, Ray Ming Lin

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We report the fabrication of AlGaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with low temperature (LT)-AlGaN and LT-GaN cap layers. It was found that the dark currents were 8.3 × 10-9, 3.3 × 10-12, and 1.1 × 10-12A under 5 V applied bias while the effective Schottky barrier heights were 0.781, 0.992, and 0.998 eV for the AlGaN photodetectors without a cap layer, with a LT-GaN cap layer and with a LT-AlGaN cap layer, respectively. It was also found that the maximum responsivities were 0.0361. 0.0328. and 0.0315 A/W for the AlGaN photodetectors without the cap layer, with the LT-GaN cap layer and with the LT-AlGaN cap layer, respectively.

Original languageEnglish
Pages (from-to)2471-2473
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number4 B
DOIs
Publication statusPublished - 2007 Apr 24

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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