AlGaN/AlN/GaN MOS-HEMTs with Al2O3 gate dielectric formed by using ozone water oxidation technique

C. S. Lee, H. Y. Liu, Wei-Chou Hsu, T. T. Wu, H. S. Huang, S. F. Chen, Y. C. Yang, B. C. Chiang, H. C. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work presents Al0.3Ga0.7N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k Al2O3 gate dielectric. The present AlGaN/AlN/GaN MOS-HEMT design (the control Schottky-gate HEMT) has showed two-terminal gate-drain breakdown voltage (BVGD)/turn-on voltage (Von) of -146.6/1.12 (-96.4/0.98) V, maximum extrinsic transconductance (gm, max) of 167.3 (124.2) mS/mm, saturated IDS density at VGS = 0 V (IDSS0) of 701.4 (538.2) mA/mm, maximum IDS density (IDS, max) of 927.9 (646) mA/mm, AV of 211.8 (172.5), unity-gain cut-off frequency (fT) of 16.8 (11) GHz, maximum oscillation frequency (fmax) of 18.8 (14) GHz, 2.4-GHz output power (Pout) of 17.2 (15.7) dBm, power gain (GS) of 14.1 (13.4) dB, and power-added efficiency (PAE) of 32.2% (27.4%). Consequently, superior improvements of 52.2% in BVGD, 43.6% in IDS, max, 34.7% gm, max, and 52.7%/34.3% in fT/fmax are achieved as compared with a control HEMT device.

Original languageEnglish
Title of host publication2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages194-196
Number of pages3
ISBN (Electronic)9781479944033
DOIs
Publication statusPublished - 2015 Aug 14
Event11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 - Sydney, Australia
Duration: 2015 Jun 92015 Jun 12

Publication series

NameProceedings of the International Conference on Power Electronics and Drive Systems
Volume2015-August

Other

Other11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015
CountryAustralia
CitySydney
Period15-06-0915-06-12

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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