AlGaN/GaN heterostructure field-effect transistor with semi-insulating Mg-doped GaN cap layer

K. H. Lee; P. C. Chang; S. J. Chang

doi:10.1149/2.011201ssl

AlGaN/GaN heterostructure field-effect transistor with semi-insulating Mg-doped GaN cap layer

K. H. Lee, P. C. Chang, S. J. Chang

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2 Citations (Scopus)

Abstract

We report the fabrication of AlGaN/GaN heterostructure field-effect transistor (HFET) with in situ grown semi-insulatingMg-doped GaN (GaN:Mg) cap layer. Without activation, the GaN:Mg film is known to be highly resistive and shown to reduce leakage current in AlGaN/GaN heterostructure. With 1-m-long gate length at drain-voltage of 10V, the presented HFET exhibited a drain-source current in saturation (IDSS) of 735 mA/mm and a peak transconductance gm(max) of 170 mS/mm, while the current gain cutoff frequency (f_T) and maximum frequency of oscillation (f_max) were 20.5 and 33.3 GHz, respectively.

Original language	English
Pages (from-to)	Q14-Q16
Journal	ECS Solid State Letters
Volume	1
Issue number	1
DOIs	https://doi.org/10.1149/2.011201ssl
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "AlGaN/GaN heterostructure field-effect transistor with semi-insulating Mg-doped GaN cap layer",

abstract = "We report the fabrication of AlGaN/GaN heterostructure field-effect transistor (HFET) with in situ grown semi-insulatingMg-doped GaN (GaN:Mg) cap layer. Without activation, the GaN:Mg film is known to be highly resistive and shown to reduce leakage current in AlGaN/GaN heterostructure. With 1-m-long gate length at drain-voltage of 10V, the presented HFET exhibited a drain-source current in saturation (IDSS) of 735 mA/mm and a peak transconductance gm(max) of 170 mS/mm, while the current gain cutoff frequency (fT) and maximum frequency of oscillation (fmax) were 20.5 and 33.3 GHz, respectively.",

author = "Lee, {K. H.} and Chang, {P. C.} and Chang, {S. J.}",

year = "2012",

doi = "10.1149/2.011201ssl",

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T1 - AlGaN/GaN heterostructure field-effect transistor with semi-insulating Mg-doped GaN cap layer

AU - Lee, K. H.

AU - Chang, P. C.

AU - Chang, S. J.

PY - 2012

Y1 - 2012

N2 - We report the fabrication of AlGaN/GaN heterostructure field-effect transistor (HFET) with in situ grown semi-insulatingMg-doped GaN (GaN:Mg) cap layer. Without activation, the GaN:Mg film is known to be highly resistive and shown to reduce leakage current in AlGaN/GaN heterostructure. With 1-m-long gate length at drain-voltage of 10V, the presented HFET exhibited a drain-source current in saturation (IDSS) of 735 mA/mm and a peak transconductance gm(max) of 170 mS/mm, while the current gain cutoff frequency (fT) and maximum frequency of oscillation (fmax) were 20.5 and 33.3 GHz, respectively.

AB - We report the fabrication of AlGaN/GaN heterostructure field-effect transistor (HFET) with in situ grown semi-insulatingMg-doped GaN (GaN:Mg) cap layer. Without activation, the GaN:Mg film is known to be highly resistive and shown to reduce leakage current in AlGaN/GaN heterostructure. With 1-m-long gate length at drain-voltage of 10V, the presented HFET exhibited a drain-source current in saturation (IDSS) of 735 mA/mm and a peak transconductance gm(max) of 170 mS/mm, while the current gain cutoff frequency (fT) and maximum frequency of oscillation (fmax) were 20.5 and 33.3 GHz, respectively.

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JF - ECS Solid State Letters

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AlGaN/GaN heterostructure field-effect transistor with semi-insulating Mg-doped GaN cap layer

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