We report the fabrication of AlGaN/GaN heterostructure field-effect transistor (HFET) with in situ grown semi-insulatingMg-doped GaN (GaN:Mg) cap layer. Without activation, the GaN:Mg film is known to be highly resistive and shown to reduce leakage current in AlGaN/GaN heterostructure. With 1-m-long gate length at drain-voltage of 10V, the presented HFET exhibited a drain-source current in saturation (IDSS) of 735 mA/mm and a peak transconductance gm(max) of 170 mS/mm, while the current gain cutoff frequency (fT) and maximum frequency of oscillation (fmax) were 20.5 and 33.3 GHz, respectively.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering