AlGaN/GaN heterostructure field-effect transistors with multi-Mg xN y/GaN buffer and Photo-CVD SiO 2 gate dielectric

K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We report the fabrication of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with multi-Mg xN y/GaN as an epitaxial buffer and using SiO 2 dielectric by photochemical vapor deposition (Photo-CVD) simultaneously for surface passivation and as gate insulator. High quality SiO 2 dielectric was successfully deposited onto AlGaN by Photo-CVD compared with the traditional plasma enhanced chemical vapor deposition (PE-CVD). Compared to conventional AlGaN/GaN HFET, the MOS-HFET with Photo-CVD SiO 2 exhibits lower leakage current, higher breakdown voltage and channel current. It was also observed that our MOS-HFETs presented pure 1/f noise with smaller trapping effects and improved immunity to the RF current collapse.

Original languageEnglish
Pages (from-to)38-43
Number of pages6
JournalSolid-State Electronics
Publication statusPublished - 2012 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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