AlGaN/GaN heterostructure field-effect transistors with multi-Mg _xN _y/GaN buffer and Photo-CVD SiO ₂ gate dielectric

Engineering & Materials Science

• Vapor deposition 100%
• Gate dielectrics 90%
• Oxide semiconductors 75%
• High electron mobility transistors 73%
• Metals 40%
• Plasma enhanced chemical vapor deposition 30%
• Passivation 25%
• Electric breakdown 23%
• Leakage currents 22%

Physics & Astronomy

• buffers 53%
• field effect transistors 49%
• metal oxide semiconductors 48%
• vapor deposition 48%
• immunity 18%
• electrical faults 15%
• passivity 14%
• high current 14%
• leakage 13%
• trapping 12%
• insulators 11%
• fabrication 9%

Chemical Compounds

• Field Effect 63%
• Dielectric Material 56%
• Buffer Solution 41%
• Breakdown Voltage 31%
• Leakage Current 27%
• Plasma Enhanced Chemical Vapour Deposition 25%
• Nonconductor 23%
• Purity 10%