AlGaN/GaN heterostructure grown on 1∘-tilt sapphire substrate by MOCVD

K. T. Lam, C. L. Yu, P. C. Chang, U. H. Liaw, S. J. Chang, J. C. Lin

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

AlGaN/GaN epitaxial layers were grown on 0{ring operator}-tilt and 1{ring operator}-tilt sapphire substrates by metalorganic chemical vapor deposition (MOCVD). With exactly the same growth conditions, it was found that dislocation density was smaller and crystal quality was better for the AlGaN/GaN epitaxial layers prepared on 1{ring operator}-tilt sapphire substrate. We also found that AlGaN/GaN epitaxial layers on 1{ring operator}-tilt sapphire substrate were grown with step growth mode while those on 0{ring operator}-tilt substrate were grown with two-dimensional island growth. From the temperature-dependent mobility, it was found that crystal quality of the AlGaN/GaN epitaxial layer prepared on 1{ring operator}-tilt sapphire substrate is better.

Original languageEnglish
Pages (from-to)147-152
Number of pages6
JournalSuperlattices and Microstructures
Volume43
Issue number3
DOIs
Publication statusPublished - 2008 Mar

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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