AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO 2 dielectrics

Kai Hsuan Lee, Ping Chuan Chang, Shoou Jinn Chang

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) based on InGaN/GaN multi-quantum-well (MQW) structure has been fabricated with SiO2 dielectric deposited via photo-chemical vapor deposition (PHCVD) using a deuterium lamp as the excitation source. High quality SiO2 was successfully formed by PHCVD and it exhibited exactly stoichiometric as gate oxide and passivation dielectric for MQW-based MOS-HEMT. The protection offered by the passivation of PHCVD of SiO2 may contribute to the significantly reduced current dispersion and improved RF performance. With 1-μm-long gate length at drain-voltage of 10 V, it exhibited a maximum drain current Id(max) of 966 mA/mm and a peak transconductance gm(max) of 127 mS/mm, while the unity gain cutoff frequency (fT) and maximum frequency of oscillation (fmax) are 13.9 and 33.9 GHz, respectively.

Original languageEnglish
Pages (from-to)105-109
Number of pages5
JournalMicroelectronic Engineering
Volume104
DOIs
Publication statusPublished - 2013 Jan 22

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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