AlGaN/GaN high electron mobility transistors with multi- MgxNy /GaN Buffer

P. C. Chang; K. H. Lee; Z. H. Wang; S. J. Chang

doi:10.1155/2014/623043

AlGaN/GaN high electron mobility transistors with multi- MgxNy /GaN Buffer

P. C. Chang, K. H. Lee, Z. H. Wang, S. J. Chang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a lowerature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

Original language	English
Article number	623043
Journal	Journal of Nanomaterials
Volume	2014
DOIs	https://doi.org/10.1155/2014/623043
Publication status	Published - 2014

All Science Journal Classification (ASJC) codes

General Materials Science

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title = "AlGaN/GaN high electron mobility transistors with multi- MgxNy /GaN Buffer",

abstract = "We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a lowerature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.",

author = "Chang, {P. C.} and Lee, {K. H.} and Wang, {Z. H.} and Chang, {S. J.}",

note = "Publisher Copyright: {\textcopyright} 2014 P. C. Chang et al.",

year = "2014",

doi = "10.1155/2014/623043",

language = "English",

volume = "2014",

journal = "Journal of Nanomaterials",

issn = "1687-4110",

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T1 - AlGaN/GaN high electron mobility transistors with multi- MgxNy /GaN Buffer

AU - Chang, P. C.

AU - Lee, K. H.

AU - Wang, Z. H.

AU - Chang, S. J.

PY - 2014

Y1 - 2014

N2 - We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a lowerature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

AB - We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a lowerature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

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VL - 2014

JO - Journal of Nanomaterials

JF - Journal of Nanomaterials

M1 - 623043

ER -

AlGaN/GaN high electron mobility transistors with multi- MgxNy /GaN Buffer

Abstract

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