Abstract
In this study, we investigate AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer with regards to DC-, RF-, and power-performance. This earlier passivation by in-situ AlN cap layer protects the surface during processing and neutralizes the charges at the top of AlGaN interface, which leads to a higher electron density of channel and superior device characteristics.
Original language | English |
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Article number | 153505 |
Journal | Applied Physics Letters |
Volume | 99 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2011 Oct 10 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)