AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer

K. H. Lee, P. C. Chang, S. J. Chang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

In this study, we investigate AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer with regards to DC-, RF-, and power-performance. This earlier passivation by in-situ AlN cap layer protects the surface during processing and neutralizes the charges at the top of AlGaN interface, which leads to a higher electron density of channel and superior device characteristics.

Original languageEnglish
Article number153505
JournalApplied Physics Letters
Volume99
Issue number15
DOIs
Publication statusPublished - 2011 Oct 10

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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