AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer

K. H. Lee; P. C. Chang; S. J. Chang

doi:10.1063/1.3651495

AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer

K. H. Lee, P. C. Chang, S. J. Chang

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this study, we investigate AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer with regards to DC-, RF-, and power-performance. This earlier passivation by in-situ AlN cap layer protects the surface during processing and neutralizes the charges at the top of AlGaN interface, which leads to a higher electron density of channel and superior device characteristics.

Original language	English
Article number	153505
Journal	Applied Physics Letters
Volume	99
Issue number	15
DOIs	https://doi.org/10.1063/1.3651495
Publication status	Published - 2011 Oct 10

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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abstract = "In this study, we investigate AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer with regards to DC-, RF-, and power-performance. This earlier passivation by in-situ AlN cap layer protects the surface during processing and neutralizes the charges at the top of AlGaN interface, which leads to a higher electron density of channel and superior device characteristics.",

author = "Lee, {K. H.} and Chang, {P. C.} and Chang, {S. J.}",

note = "Funding Information: This work was supported in part by the National Science Council under Contract NSC 100-2221-E-168-030. ",

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AU - Chang, S. J.

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