AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistors (MOSHFETs) with liquid phase deposited SiO2 as the insulating gate are demonstrated. A very large gate swing voltage is applied. An AlGaN/GaN MOS heterostructure FET with saturation characteristics is observed. For a gate length of 2 μm in a 5 μm channel opening with a gate width of 100 μm, MOSHFET with transconductance and maximum drain current of 78 mS/mm and 720 mA/mm, respectively, is achieved.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||7 A|
|Publication status||Published - 2002 Jul 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)