AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistor based on a liquid phase deposited oxide

Dei Wei Chou, Kuan Wei Lee, Jian Jun Huang, Hou Run Wu, Yeong Her Wang, Mau Phon Houng, Shoou Jinn Chang, Yan Kuin Su

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Abstract

AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistors (MOSHFETs) with liquid phase deposited SiO2 as the insulating gate are demonstrated. A very large gate swing voltage is applied. An AlGaN/GaN MOS heterostructure FET with saturation characteristics is observed. For a gate length of 2 μm in a 5 μm channel opening with a gate width of 100 μm, MOSHFET with transconductance and maximum drain current of 78 mS/mm and 720 mA/mm, respectively, is achieved.

Original languageEnglish
Pages (from-to)L748-L750
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number7 A
Publication statusPublished - 2002 Jul 1

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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